AON1611 Discrete Semiconductor Products

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AON1611 is an advanced Planar Oxide-isolated P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It integrates an isolated gate voltage drive (VGS), a series-connected Body Current Source (BCS), and a series connection of heat resistors for better energy efficiency and improved performance, making it suitable for high-speed and high-performance power switch applications in the consumer, industrial, and automotive markets.

The AON1611 MOSFET utilizes advanced Oxide-Isolated Process Technology (OIPT) that prevents gate charge buildup problems associated with standard MOSFETs. OIPT also eliminates additional power losses typically seen in traditional MOSFETs. This allows AON1611 to support high-speed operation with much lower RC delay – providing an ideal choice for high-speed applications that require low distortion.

AON1611 MOSFET can operate in the range of -200V to +200V, and has a high switching speed of up to 10µs with robust RDS(on) performance. It can handle high channel currents in excess of 30A, allowing low-loss switching operations in various consumer, industrial, and automotive applications. And with its low threshold voltage (VGS) and low thermal resistance (Rth), it can also be used for power switching in wireless infrastructure applications.

Aside from its wide range of voltage and robust switching performance, the AON1611 MOSFET also offers excellent on-state resistance performance (RDS(on)) compared to other planar oxide-isolated MOSFETs in the market. This allows for higher efficiency in power electronics applications such as RF power amplifiers and DC/DC converters.

In terms of working principle, the AON1611 MOSFET is designed to control the voltage delivered to the drain of a MOSFET. When the gate voltage on the MOSFET is increased, electrons are attracted to the gate and the channel conductivity increases. As a result, current flows from the drain to the source of the MOSFET and power is delivered.

When the gate voltage is reduced, electrons are repelled and the channel conductivity decreases, resulting in decreased current and reduced power delivery to the drain. This gate voltage control is the basis of working for the AON1611 MOSFET.

In summary, AON1611 is an advanced Planar Oxide-Isolated P-Channel MOSFET that offers exceptional performance for high-speed and high-efficiency power switching applications. It is suitable for low-distortion high speed applications and can also be used in wireless infrastructure thanks to its low-threshold voltage and low-thermal resistance performance. Additionally, it offers excellent on-state resistance and has a wide range of voltage and current capabilities.

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