AON7611 Allicdata Electronics
Allicdata Part #:

785-1404-2-ND

Manufacturer Part#:

AON7611

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
More Detail: Mosfet Array N and P-Channel, Common Drain 30V 9A,...
DataSheet: AON7611 datasheetAON7611 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)
Description

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The AON7611 is a novel 3-terminal positive and negative half-bridge array that features a N-channel and a P-channel MOSFETs in one package. It is an ideal device for higher efficient designs in automotive and commercial applications. Moreover, its internal electro static discharge (ESD) protection ensures greater reliability in harsh conditions.

In terms of applications, the AON7611 has been mainly featured in high-side switches and low-side switches, due to its versatility in controlling its N-channel MOSFET and P-channel MOSFET in both high-side and low-side topologies. The device further permits switching the common point voltage from ground to the supply voltage easily. This significantly accelerates the power conversion design process to reduce design time and complexity. The AON7611 also eliminates external components from being needed by incorporating the bootstrap diode into the device, which results in a highly integrated and robust solution for automotive and commercial applications.

As for its working principle, the AON7611 is based on an integrated gate driver circuit and N- and P-channel MOSFETs, thereby providing a half-bridge array driver to the external power MOSFETs. This device works by providing an amplified drive output onto its gate inputs, which allow more robust and protected drive signals to power the external FETs. Specifically, its gate drive logic threshold levels and gate drive current is internally adjusted to turn on and off the two MOSFETs. This device transitions between high impedance and low impedance states quickly and significantly optimizes the switching losses, thereby improving the line and load regulation efficiency.

In conclusion, the AON7611 is an ideal choice for higher efficient designs in automotive and commercial applications. Utilizing its internal gate driver, ESD protection and bootstrap diode, this 3- terminal half-bridge array device provides an integrated and robust solution for high- side switches and low-side switches. It works by providing an amplified drive output onto its gate inputs, which allow more robust and protected drive signals to power the external FETs.

The specific data is subject to PDF, and the above content is for reference

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