AON7296 Discrete Semiconductor Products |
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| Allicdata Part #: | 785-1731-2-ND |
| Manufacturer Part#: |
AON7296 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 100V 5A 8DFN |
| More Detail: | N-Channel 100V 5A (Ta), 12.5A (Tc) 3.1W (Ta), 20.8... |
| DataSheet: | AON7296 Datasheet/PDF |
| Quantity: | 30000 |
| Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (3x3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 20.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 415pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 66 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Ta), 12.5A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The AON7296 is a single-chip 900MHz Power Amplifier which utilizes patent-pending technology to improve amplifier efficiency and reduce quiescent current. Built on GaN/GaAs technology, the AON7296 is designed for use in 3G/4G/5G communication and automotive applications, allowing for improved system performance, higher battery life, and increased range.
The AON7296 benefits from advanced design techniques, such as stacking multiple cells in order to gain higher efficiency and lower quiescent current. The AON7296 also features advanced thermodynamic design in order to minimize losses due to radiation and minimize quiescent power consumption.
The AON7296 is a Field Effect Transistor (FET) design that employs both N-channel and P-channel MOSFETs to create the amplification effect. The device encapsulates two N-channel MOSFETs with an embedded P-channel MOSFET connected in series. The N-channel and P-channel MOSFETs work together to amplify the RF signal. The device uses a single-tail configuration, which eliminates parasitic capacitances that can reduce gain and efficiency.
The working principle of the AON7296 is simple. An RF signal is applied to the device’s gate, causing current to flow through the P-channel MOSFET. This current is then amplified by the N-channel MOSFETs, resulting in a much higher output current. The output current is then used to drive the load, such as an antenna.
The AON7296 is a highly efficient Power Amplifier that is capable of operating at a maximum output of 25 dBm. The device features a very low noise figure of less than 1.2 dB, and an excellent ripple rejection of more than 55 dB. Additionally, the AON7296 offers excellent linearity, with a 4G ACPR of better than -56 dBc. In other words, the device is capable of producing a high quality signal with minimal interference.
The AON7296 is an ideal solution for a wide range of applications. It is well-suited for use in cellular phones, Wi-Fi hotspots, base stations, and automotive applications. It can also be used in a range of other 3G/4G/5G communication devices. The AON7296 is available in both thermally-enhanced and standard packages, allowing for flexible package configurations.
Overall, the AON7296 is an excellent Power Amplifier solution, offering excellent efficiency and performance while taking up minimal space. Its high level of versatility and reliability makes it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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AON7296 Datasheet/PDF