| Allicdata Part #: | AON7422E_101-ND |
| Manufacturer Part#: |
AON7422E_101 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH DFN |
| More Detail: | N-Channel 30V 20A (Ta), 40A (Tc) 3.1W (Ta), 36W (T... |
| DataSheet: | AON7422E_101 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 8-VDFN Exposed Pad |
| Supplier Device Package: | 8-DFN-EP (3x3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2940pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AON7422E_101 are is the latest found application field and working principle of the Field Effect Transistor (FET). It is made by Aosen International based in Texas, United States, and they have developed this product to meet different industrial needs. Long life and low power consumption are the main advantages of this new technology. It is suitable for various types of applications such as solenoid applications, switch applications, and mechanical control.
AON7422E_101 is basically a semiconductor device that increases or decreases the flow of electrons by using an electric field. When the potential at the gate of the FET is high, it blocks the current from flowing between the source and drain. Conversely, when the voltage applied is low, the current can freely flow through the FET. As such, this makes the device a very important component when it comes to switching applications or even controlling a motor.
AON7422E_101 is constructed using a special technology that is called Trench FET (TFET). This is an advanced technology that offers the benefits of low power consumption and improved efficiency. Since the device is made with a trench field effect transistor, it is smaller in size than the traditional MOSFETs thus reducing its die area and power consumption. Additionally, it also has a low threshold voltage, thus allowing the transistor to turn on and off at lower voltages.
Another important feature of the AON7422E_101 is its ability to operate at higher temperatures. The TFET used in the FET makes it highly durable under extreme conditions. Furthermore, it can also cope with high current and voltage up to a certain limit. This makes the device perfect for many industrial applications as they require reliable components operating at higher temperatures.
The AON7422E_101 is a good choice for various applications and provides excellent performance. Since it is a single FET, it is also quite easy to use. Its relatively small size and low power consumption makes it suitable for different types of projects such as solenoids, switches, and mechanical control. Additionally, it is also available in different forms such as SOT23-6, SOIC-16, and TSSOP-8.
In conclusion, the AON7422E_101 is a great FET with many advantages. Thanks to its small size, low power consumption, and high temperature tolerance, it is suitable for many applications in both the industrial and consumer markets. Furthermore, since it is made using a TFET technology it also offers improved efficiency and reliability making it a great choice for any project.
The specific data is subject to PDF, and the above content is for reference
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AON7422E_101 Datasheet/PDF