AON7900 Allicdata Electronics
Allicdata Part #:

785-1249-2-ND

Manufacturer Part#:

AON7900

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 8A/13A 8DFN
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 30V 8A, 13A...
DataSheet: AON7900 datasheetAON7900 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Description

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AON7900 FET array is a set of four tiny low-voltage N-channel power MOSFETs integrated into a small single package measuring 1.6 x 0.8 mm. The integrated FETs are a surface-mountable, high-performance power solution suitable for a wide range of applications, including microcontrollers, DC motors, and more. They provide the user with an efficient, reliable, and low-cost solution for power-switch applications that require a high current rating and low RDS(ON).

The AON7900 FET array utilizes the maximum installation density by using a tiny 0.15mm pitch package size with a total package area of only 1.6mm x 0.8mm. This helps save board space and makes the circuit design process more convenient.

The FET array consists of four dual-drain N-channel MOSFETs, each having an on-state resistance (RDS)(ON) of less than 0.005 Ω. Each of the FET\'s channels is independently operated by its gate, enabling bi-directional current switch control. The device\'s maximum on-state drain current rating is 4 A, with a maximum peak pulse voltage of 20 V. A high level of protection is provided by the avalanche-rated feature of the FETs, allowing them to sustain high energy transient pulses.

The AON7900 utilizes an innovative design, which includes an embedded charge pump and high-speed p-channel driver. This allows for extremely fast switching speed, achieving speeds as fast as 1.5 µS/V. The charge pump is designed to drive a high-pulse voltage across the FETs\' drain-source terminals, so that the on-state resistance can be reduced to a very low value.

The integrated FETs also provide excellent power efficiency and reduce power losses. The FETs\' resistance value allows for a low drain-source voltage, resulting in less power consumption. The FETs also provide improved thermal performance and excellent temperature stability due to their low on-state resistance value.

The AON7900 FET array is ideal for power switch applications that require low RDS(ON) in a very small package. It is also suitable for DC motor control, AC motor control, and brushless motor control. It can also be used for microcontroller applications, including metering and smart metering, and lighting control applications.

The specific data is subject to PDF, and the above content is for reference

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