AONX36372

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AONX36372 is a single field-effect transistor (FET) with a range of unique and diverse characteristics that make it a suitable FET for meeting a variety of technical requirements. This FET incorporates a N-channel depletion-mode structure with added features that enhance the designs of high-power amplifiers and motor control circuits, as well as switches and other applications. It features low gate-source threshold voltage and low drain-source ON resistance, both of which are important when dealing with high-voltage and high-current applications.

AONX36372 is manufactured using a 4 μm silicon-on-insulator (SOI) process that provides small size and low capacitance. In addition, its large cell size (1.61 mm2) and large pad size (17 mm2) make it well suited for applications that require high-frequency switching. The 1.61 mm2 cell size also allows the use of higher doping densities, resulting in improved thermal performance. Moreover, its low input capacitance is beneficial in DC-DC converters and other high-speed digital applications.

AONX36372 also incorporates a double-gate architecture featuring an embedded thin oxide field oxide and a thin oxide-channel depletion region. These features offer improved performance characteristics, including better Gate leakage current performance and higher drain-source breakdown voltage in comparison to conventional FETs. Its unique low-impedance drain-source interface enables the production of higher power outputs with fewer power transistors. These characteristics make AONX36372 suitable for compact high power amplifier design and motor control circuits.

In addition, AONX36372 features low thermal resistance, which ensures improved thermal performance compared to other FETs. Its low On-resistance, combined with a low gate-source threshold voltage, provides integrated circuits with the flexibility of allowing the source-to-drain voltage to be set without any external circuitry. The benefits of low thermal resistance also translate to lower power losses and improved chip performance.

The typical operating principle of a FET is switching a small charging current between the gate and source terminals of the device. This allows the circuit to be switched between two points without the need for a separate power source, as a small amount of charge is provided by the charge carriers. This can be used to activate or deactivate components or circuits in the device. AONX36372 provides a unique combination of low gate-source threshold voltage and low drain-source ON resistance, making it an ideal FET for high-current and high-voltage applications.

AONX36372 is well suited for applications that require high-frequency switching, such as DC-DC converters, as well as applications requiring high power and low gate-source threshold voltage. It is also ideal for applications where small size and low capacitance are important, such as motor control circuits and high power amplifiers. Its low On-resistance and low thermal resistance make AONX36372 a desirable choice for digital circuits, as it enables faster switching times, lower power consumption, and improved performance.

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