AOSP32314 Allicdata Electronics

AOSP32314 Discrete Semiconductor Products

Allicdata Part #:

785-1794-2-ND

Manufacturer Part#:

AOSP32314

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N CH 30V 8SOIC
More Detail: N-Channel 30V 14.5A (Ta) 3.1W (Ta) Surface Mount 8...
DataSheet: AOSP32314 datasheetAOSP32314 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.16059
Stock 3000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AOSP32314 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET is considered one of the most important active devices used in integrated circuits and power electronics due to its low on-state resistance, high switching, and low power consumption. It is a form of switch with multiple gates that controls the passing of current between the source and the drain.

The AOSP32314 is a N-channel enhancement type MOSFET, meaning that there is no body connection needed, and no external gate voltage required to allow current flow between the drain and the source. The type of MOSFET also obtains enhanced characteristics such as low on-state resistance and low input capacitance. This makes them ideal for use in high speed switching applications such as Flash memory, low voltage synchronous rectifiers, low voltage bipolar system drives and other low voltage analog circuit operations.

The working of the MOSFET is based on the principle of electrostatics. This means that when a certain applied voltage at the gate, the voltage at the gate will create an electric field across the gate. As a result, a depletion region or an inversion layer will be created, which enables an electric conduction between the source and the drain, there by allowing current flow between them. By controlling the voltage on the gate of the MOSFET, the current that flows through the device can be controlled, thus making them more efficient device.

Due to its advantages such as low on-state resistance, high switching speeds and low power consumption, the AOSP32314 MOSFETs have become the most attractive choice for many analog and digital applications. In particular, these MOSFETs are used in applications such as low voltage synchronous rectifiers, low voltage bipolar system drives, Flash memory, and other low voltage analog and digital systems. They are also ideal for use in the industrial and automotive application due to their superior high temperature and low reverse transfer rate. They are also well-suited for applications with multifunctional utilization requirements, due to their advanced characteristics such as low on-state resistance and high input capacitance.

The AOSP32314 MOSFETs are designed using advanced low voltage devices that offer superior performance and improved power consumption. Their small size, along with their wide operating temperature range, make them the ideal choice for many low voltage applications. The devices have been proven to be reliable in the field and have been successfully used in numerous applications.

In conclusion, the AOSP32314 MOSFET is the ideal choice for many applications that require high switching speeds and low power consumption. Their superior characteristics make them the perfect device for applications such as low voltage synchronous rectifiers, low voltage bipolar system drives, Flash memory, and other low voltage analog and digital operations. With their versatile design and advanced features, these MOSFETs can be used in various applications to provide reliable operation and improved power efficiency.

The specific data is subject to PDF, and the above content is for reference

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