| Allicdata Part #: | 785-1172-5-ND |
| Manufacturer Part#: |
AOT9N50 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 500V 9A TO-220 |
| More Detail: | N-Channel 500V 9A (Tc) 192W (Tc) Through Hole TO-2... |
| DataSheet: |  AOT9N50 Datasheet/PDF |
| Quantity: | 652 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 192W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1042pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.The AOT9N50 is a single power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that features an ultra-low on-resistance and impressive performance for automotive applications. It enables devices to perform up to 16A peak at 25V and features dynamic dv/dt rating increases for higher efficiency and efficiency of space for design. The AOT9N50 is especially suited for high-current switching applications, such as automotive high-side, low-side and load-capture control switches.
The AOT9N50 is a N-channel MOSFET that works off a high-voltage supply line. It is able to swtich large amounts of current which makes it suitable for a wide range of applications, including automotive, lighting and industrial applications.
When the gate voltage of an N-channel MOSFET is lower than that of the source, it is in the off state, and no current flows. When the gate voltage is higher than the source, the FET is in the on state and current can flow. The FET’s capacitance does not affect the current, and the FET can switch very fast. This is what makes MOSFETs great for controlling high currents.
The AOT9N50 is designed to switch large amounts of current without dissipating too much heat. It features a low on-resistance of 0.095 Ω, a high current rating of up to 16A peak and a high allowable dV/dt rating of 1.9V/nsec. This allows for faster switching and better efficiency than other MOSFETs.
The AOT9N50 also features two integrated protection features. The first is an uncontrolled diode which prevents destructive transients from killing the FET. The other feature is a charge-pump circuit, which helps prevent noise-generated false “on”/”off” transitions. These features make the AOT9N50 ideal for high-side and low-side switching applications.
The AOT9N50 is a low cost, high performance MOSFET that is suitable for a wide range of applications. It has a low on-resistance, a high allowable dV/dt rating, two integrated protection features, and is capable of switching large amounts of current. This makes it suitable for automotive, lighting and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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