| Allicdata Part #: | AOU4S60-ND |
| Manufacturer Part#: |
AOU4S60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 4A TO251 |
| More Detail: | N-Channel 600V 4A (Tc) 56.8W (Tc) Through Hole TO-... |
| DataSheet: |  AOU4S60 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 56.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 263pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
| Series: | aMOS™ |
| Rds On (Max) @ Id, Vgs: | 900 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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AOU4S60 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). It is a single-terminal, symmetrical, insulated gate-type transistor that uses an insulated gate to control an electric field across the semiconductor. AOU4S60 is a power MOSFET usually used for power supply applications.
The working principle behind MOSFETs is based on the mobility of carriers flowing through the channel of the transistor. When an electric field is applied to the gate region of the transistor, the carriers within the channel move away from the gate region and flow into the body and the source regions of the transistor. This results in a current flowing through the channel, which is the voltage drop across the transistor.
In the case of AOU4S60, it uses a vertical enhancement structure that takes advantage of the benefits of high blocking voltage and superior switching characteristics. The MOSFET has two terminals: source and drain, and two regions: body and gate. The source and drain regions are responsible for carrying the current, while the body and gate regions are responsible for controlling it. The body and gate regions are insulated by a thin layer of silicon dioxide. The gate is used to control voltage and current, which can be used to switch the device on and off.
The architecture of AOU4S60 makes it suitable for use with high frequency, high voltage, and high power applications. It is also highly efficient and reliable. The transistor also has high temperature tolerance and can operate in high temperature environments. Its low-voltage drive capabilities also make it suitable for use in low voltage applications.
AOU4S60 is a popular choice for many different applications due to its versatile characteristics and high performance. It is commonly used in motor control, lighting control, power grid design, and switching systems. It is also used in applications such as solar energy converters, charging systems, and energy storage systems.
In conclusion, AOU4S60 is a versatile and reliable MOSFET that is used in many different applications due to its high performance and low-voltage drive capabilities. It has a wide range of applications that range from motor control to charging systems. The transistor’s high temperature tolerance and superior switching characteristics make it a popular choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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