| Allicdata Part #: | AOU7S60-ND |
| Manufacturer Part#: |
AOU7S60 |
| Price: | $ 0.59 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 7A TO251 |
| More Detail: | N-Channel 600V 7A (Tc) 83W (Tc) Through Hole TO-25... |
| DataSheet: |  AOU7S60 Datasheet/PDF |
| Quantity: | 1000 |
| 4000 +: | $ 0.52731 |
| Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 372pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
| Series: | aMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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AOU7S60 is a new generation of transistor products from the company. It is a single-channel, high-efficiency, high-speed, high-frequency, low-power, low-voltage, multi-mode MOSFET product. It mainly applies to power driving and low-noise output fields such as portable electronic products, digital data transmission, and optical communication. With the high level of integration and miniaturization of portable electronic products, the space is more and more demanding.
The AOU7S60 is a MOSFET single-channel semiconductor device whose construction is based on a semiconductor substrate with source and drain electrodes formed in it. The gate electrode is formed on the substrate and is connected to the source and drain electrodes through a high-frequency insulation layer. This structure makes it possible to reduce the transistor\'s power consumption and increase its switching frequency. It is widely used in portable electronic products and other applications.
The working principle of AOU7S60 is similar to that of a common MOSFET. The working principle of this MOSFET is that when a positive voltage is applied to the gate electrode, the current between the source and the drain is increased, and when the voltage is removed, the current decreases. Furthermore, when the voltage is relatively large, the current is further increased, which is known as “self-saturation”. In self-saturation, the MOSFET can switch quickly and accurately.
AOU7S60 has many advantages such as low power consumption, high switching frequency, fast switching speed, high switching efficiency, and stable performance. Due to its high integration and miniaturization, it is widely used in portable electronic products, digital data transmission and optical communication. It is also widely used in power driving and low-noise output applications.
In general, the AOU7S60 is a high-efficiency, single-channel, high-frequency, low-power, low-voltage, multi-mode MOSFET product. It is widely used in portable electronic products, digital data transmission, and optical communication applications. However, due to its high integration and miniaturization, its space is more and more demanding. The working principle of this MOSFET is similar to that of a common MOSFET. It has many advantages such as low power consumption, high switching frequency, fast switching speed, high switching efficiency, and stable performance.
The specific data is subject to PDF, and the above content is for reference
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