AOV11S60 Discrete Semiconductor Products

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The AOV11S60 is a MOSFET (MetalOxideSemiconductorFieldEffectTransistor) that belongs to the family of single source FETs (Field EffectTransistors). It comes from the family of V11S60 series, which consists of N- and P-channel devices operating at frequencies of up to 6 GHz with low drain-source ON resistance and drain-source breakdown voltage between 28 and 60 volts. Its main usage lies in small signal amplifiers, switches and attenuators built for modern radio-frequency (RF) communications systems.

The AOV11S60 is a rugged device, as it is capable of withstanding overstanding high power RF signals and temperatures up to 158°F (70°C). It shows high levels of linearity and power handling. Further, the part is resistant to dielectric absorption, which makes it suitable for high data rate applications that require tight control of signal integrity.

The AOV11S60 has a symmetrical symmetric layout, which allows for more flexibility in the design . Its main features are a low Q switching loss, a low Q parasitic noise and an on-chip integrated temperature compensation diode that helps in controlling the operating temperature of the device. Furthermore, it has a wide input/output impedance range, which allows for stable control over the output signal. Also, thanks to its on-chip amplification, the device can be tuned to have consistent output matching.

The AOV11S60 works on the principle of applying a gate voltage to the gate-source terminal of the MOSFET transistor, which makes its n-channel or p-channel conductive. The conductive path is then either used as a switch to turn on/off the signal flow, or as an amplifier to enhance the signal characteristics. It uses a continuous variation of the gate voltage to control the ON resistance and the magnitude of the signal.

It is worth noting that the AOV11S60 is built in an industry standard package – Small Outline Integrated Circuit (SOIC) which makes it possible for its integration into a range of applications. Moreover, its high operating frequencies make it ideal for a variety of RF amplification, switching and tailoring applications including radio transmitters and radio receivers. As a result, the AOV11S60 is suitable for use in a variety of industries, ranging from consumer electronics to medical, aerospace and military applications.

In summary, the AOV11S60 is a small-footprint, single-source MOSFET transistor that is designed to provide high performance and reliable performance in a variety of RF and signal amplification, switching and tailoring applications. It is robust and resistant to dielectric absorption, making it suitable for a wide range of applications. Further, its high operating frequencies make it ideal for RF communication systems that require fast response times.

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