Allicdata Part #: | AOW410-ND |
Manufacturer Part#: |
AOW410 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V TO262 |
More Detail: | Through Hole TO-262 |
DataSheet: | AOW410 Datasheet/PDF |
Quantity: | 1000 |
Series: | * |
Packaging: | Tube |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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AOW410 is an integrated, monolithic N-type enhancement field effect transistor (FET) circuit integrated circuit (IC) for mobile communications applications. It is designed for operation in radio frequency (RF) signal transmission and reception and provides high-performance gain and power management in small, low-cost packages. The AOW410 is particularly useful for multi-carrier signal and signal mixture applications.The AOW410 offers a maximum supply voltage of 25V, an operating temperature range between -40°C and +85°C, and a range of biasing options that can be selected to optimize performance for specific applications. The device is packaged in a low-cost surface-mount package, making it suitable for mobile communications applications in which size and power management are important. The AOW410 can also be used in a variety of other applications, such as digital signal processing and instrumentation.The most unique feature of the AOW410 is its integrated power management component, which is an essential component of many RF transceivers. The integrated power management block, or PmB, provides effective on-chip power management by adjusting the bias current and modulation levels of the FET, enabling more efficient signal transmission and reception. The integrated PmB also provides a decrease in power dissipation and helps reduce the physical size of the package.The working principle of the AOW410 is relatively simple. When power is applied, the device begins by sourcing current from the drain terminal of the integrated FET. As the signal passes through the FET, the gate voltage is adjusted by a series of internal circuits. This controls the drain current, which is then translated into a signal at the output. The FET also provides additional signal attenuation, allowing the signal to be properly filtered before it is sent through the output.In addition to the power management component, the AOW410 also has several other features that make it suitable for use in a wide range of applications. The device includes an integrated voltage regulator, which provides a stable, low-noise power source. The device also has a low on-resistance, which helps to reduce power consumption and ensure efficient operation. The self-biasing feature of the device allows for a wide range of operating voltages, making it ideal for applications where power levels may fluctuate.Overall, the AOW410 is an integrated monolithic FET circuit designed for applications where high performance, low power consumption, and size are key considerations. It is an ideal choice for mobile communications and other applications where efficiency and performance are critical. It combines reliable operation, low power consumption, and easy integration into other circuits, making it an excellent choice for application designers.
The specific data is subject to PDF, and the above content is for reference
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