Allicdata Part #: | 785-1527-5-ND |
Manufacturer Part#: |
AOW7S65 |
Price: | $ 0.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 7A TO262F |
More Detail: | N-Channel 650V 7A (Tc) 104W (Tc) Through Hole TO-2... |
DataSheet: | AOW7S65 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.76347 |
Series: | aMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 434pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The AOW7S65 is a type of single-gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). This type of transistor is commonly used to control the power and voltage in various electrical devices, from computers and mobile phones to amplifiers and televisions.
As with all transistors, the AOW7S65 has three primary components. The gate, source and drain are responsible for the electric charge, which passes through the device. The primary function of a transistor is to act as a switch, controlling the flow of electrical current.
The AOW7S65 contains an insulated gate within a semiconductor material, allowing electric charges to pass through it. This gate will open and close according to the voltage applied to it. When the gate is open, current will pass through the source and through to the drain. When the gate is closed, no current can pass. This is the basic working principle of a MOSFET transistor.
MOSFET transistors offer numerous advantages over traditional transistors such as BJTs (Bipolar Junction Transistors) or JFETs (Junction Field Effect Transistors). MOSFETs are easier to construct and are faster, more reliable and more efficient than traditional transistors. Additionally, they offer a higher input impedance, allowing them to be used in a variety of applications where other transistors are unable to meet the demands.
The AOW7S65 is commonly used in power amplification and switching applications, as well as in audio amplifiers, digital logic and motor control. It is particularly suitable for any low power applications. It is also used in many industrial and automotive applications, as the device is very reliable and has fast switching time.
The AOW7S65 offers a wide range of features, such as a low and a high breakdown voltage, a low resistance and a good high frequency response. Additionally, it features ESD (electrostatic discharge) protection, making it ideal for applications where the device is exposed to potentially damaging static electricity. It also features an on-board temperature sensor which can be used to monitor the device’s temperature, helping to keep it from over-heating.
In conclusion, the AOW7S65 MOSFET is a versatile, reliable and efficient device which is suitable for a range of applications, such as audio amplification, digital logic and motor control. It is a fast and efficient transistor, ideal for low power applications, featuring a wide range of features including ESD protection and an on-board temperature sensor.
The specific data is subject to PDF, and the above content is for reference
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