AOY2N60 Allicdata Electronics
Allicdata Part #:

AOY2N60-ND

Manufacturer Part#:

AOY2N60

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH
More Detail: N-Channel 600V 2A (Tc) 57W (Tc) Through Hole TO-25...
DataSheet: AOY2N60 datasheetAOY2N60 Datasheet/PDF
Quantity: 1000
3500 +: $ 0.16640
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The AOY2N60 is a 600V in-line rated MOSFET, offering fast switching and low on-state resistance. The device is suitable as an electronic switch for power applications in a variety of applications, including motor drives, power converters and power management. This article provides a detailed overview of the device\'s application fields and working principles.

Applications

The AOY2N60 is designed for resistive, inductive and capacitive loads and is capable of handling high output currents up to 60A in-line. In addition to its excellent power conversion efficiency, the MOSFET also has low reverse recovery current and a low gate turn-on resistance. Therefore, it is ideal for switching devices in power management applications such as motor drives, power converters, AC/DC converters, solar inverters and industrial generators.

The AOY2N60 is also suitable for a range of protection applications. Its short reverse recovery time enables the MOSFET to respond quickly to overload and short-circuit faults, providing useful protection in applications such as lighting, heating and appliance control.

Working Principle

The AOY2N60 MOSFET is based on an n-channel MOSFET technology and uses a metal-oxide semiconductor structure to switch on and off the current flow. It works by applying a voltage to the MOSFET\'s gate, which creates an electrical field that controls the flow of current. The device is designed to operate optimally with a Gate-Source Voltage (G-S) between 3V and 20V.

When the voltage at the gate rises to the threshold voltage, the device switches on, allowing current to flow through the channel. When the gate voltage falls below the threshold voltage, the device switches off, blocking current flow. The AOY2N60 offers fast switching due to its low electric field coefficient, which reduces the voltage needed to turn it on or off.

Conclusion

The AOY2N60 MOSFET is a high-performance device, offering fast switching and low on-state resistance. It is suitable for a wide range of applications, including motor drives, power converters and power management, as well as protection applications. The device is based on an n-channel MOSFET technology, which works by applying a voltage to the gate, creating an electrical field that controls the flow of current. The AOY2N60 offers fast switching with a low turn-on resistance, making it an ideal choice for switching devices in power management applications.

The specific data is subject to PDF, and the above content is for reference

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