| Allicdata Part #: | AOY423-ND |
| Manufacturer Part#: |
AOY423 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH |
| More Detail: | P-Channel 30V 15A (Ta), 70A (Tc) 2.5W (Ta), 90W (T... |
| DataSheet: |  AOY423 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | TO-251B |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 90W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2760pF @ 15V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 20A, 20V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V, 20V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 70A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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AOY423 is a digital-controlled type DMOS power FET (field effect transistor) developed by Alpha & Omega Semiconductor, a leading designer and manufacturer of power semiconductor products. It is specifically designed for power sequencing and/or hot swap applications. It is particularly suited for compressed hot-swap systems which require high-speed power sequencingsuch as those used in notebook personal computer applications. AOI423 is offered in a two-terminal, small-package PowerTrench® device, the AOI423L-T2-GE3, perfect for hard to mount designs.
AOY423 Application Fields
AOI423 finds its application in several systems, particularly in notebook PCs and battery-operated devices, as it offers high-current capability and low-on-resistance as well as very low-sequence time. It is also well-suited for DC/DC converters, hot-swap applications, battery management systems, and high-current power supplies that require sequential power. It even finds application in LED driver applications as well as in other areas where compact package, high current/high power, and quiet operation are essential.
AOY423 Working Principle
AOI423 works on the principle of an edge-termination DMOS FET (field effect transistor) which uses a patented surface-termination technology to achieve the best overall performance. It exhibits very low gate capacitance, providing very fast switching speed and improved high-temperature reliability while maintaining tight on-time to resistance ratio. It also offers good low/high level on-state characteristics. The device is protected by both reverse body diode and reverse G-S diode clamping. Further, it is well-suited for battery protection and hot-swap applications due to its low sequence time and fast turn-off time.
In order to ensure its integrated circuit safety, the AOI423 is equipped with Over-Current Protection (OCP) mechanism, the current is limited by a fast switching FET when the sensing current reaches a set OCP level. This prevents damage to the integrated circuit and prevents damaging effects from system components like pull-up, pull-down, and hot-plugging components.
Lastly, the AOI423 complements the AOSF414L, a special designed P-channel FET designed for PowerTrench MOSFETs, which offers similar performance. Together, they provide the user with the convenience of power sequencing and hot swapping applications.
The specific data is subject to PDF, and the above content is for reference
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