APL602B2G Allicdata Electronics
Allicdata Part #:

APL602B2G-ND

Manufacturer Part#:

APL602B2G

Price: $ 35.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 49A T-MAX
More Detail: N-Channel 600V 49A (Tc) 730W (Tc) Through Hole T-M...
DataSheet: APL602B2G datasheetAPL602B2G Datasheet/PDF
Quantity: 1000
30 +: $ 31.84170
Stock 1000Can Ship Immediately
$ 35.02
Specifications
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
Vgs (Max): ±30V
Series: --
Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
Drive Voltage (Max Rds On, Min Rds On): 12V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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APL602B2G is a high-drain single N-channel MOSFET(metal-oxide semiconductor field-effect transistor). It is designed for use in various switching applications such as DC/DC power converters and motor control. The device features a low Ron of usually around 3mΩ, and an ID max current of up to 5 A. It also has low gate threshold voltage of usually 2V and high input impedance which makes it well suited for switching applications. Moreover, the device is specified in the −55℃ to 150℃ temperature range and the body diode is guaranteed for a minimum of 80ns.

The main application of APL602B2G MOSFET is for on/off switching. It can be used in many power circuits such as power supplies, motor control and switching circuits. The device also supports applications such as load switch, DC/DC converter, LED dimming, AC-DC power conversion, battery management, and switching power amplifier. Furthermore, these MOSFETs can also be used as an efficient gate driver in high power circuits, thanks to its low turning-on voltage. It can also be used in momentary circuits to control the flow of energy and in DC-DC converter applications as a power switch.

The working principle of MOSFET is based on voltage or electrical control to provide power regulation. It is a three-terminal device consisting of a source terminal, a drain terminal, and a gate terminal. The MOSFET has controlled current conduction by varying the voltage applied at the gate terminal. When the gate voltage is low, the transistor is off and no current flows between the drain and the source. When a higher voltage is applied to the gate terminal, the transistor is said to be “on” since a current flows from drain to source terminals. This is all possible because of the physical properties of the MOSFET which allows it to be switched on and off without requiring any external power applied to the gate terminal.

The APL602B2G is a N-channel depletion type MOSFET which is more suitable for switching and power management applications, due to its high current carrying capability and low Ron. It has a low gate threshold voltage and high input impedance which makes it suitable for power control circuit applications. It has a high breakdown voltage of usually 400V and a high avalanche rating of usually 55V.

In sum, the APL602B2G is an excellent MOSFET for switching applications. Its low Ron and high input impedance makes it well suited for power control circuits and other power management applications. With high breakdown voltage, avalanche rating and guaranteed temperature range, it is guaranteed to provide efficient and reliable power switching.

The specific data is subject to PDF, and the above content is for reference

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