Allicdata Part #: | APT40GT60BRG-ND |
Manufacturer Part#: |
APT40GT60BRG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 80A 345W TO247 |
More Detail: | IGBT NPT 600V 80A 345W Through Hole TO-247 [B] |
DataSheet: | APT40GT60BRG Datasheet/PDF |
Quantity: | 743 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | Thunderbolt IGBT® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 40A |
Power - Max: | 345W |
Switching Energy: | 828µJ (off) |
Input Type: | Standard |
Gate Charge: | 200nC |
Td (on/off) @ 25°C: | 12ns/124ns |
Test Condition: | 400V, 40A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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APT40GT60BRG Application Field and Working Principle
APT40GT60BRG (also referred to as the GT60) is a device capable of switching voltages and currents with great efficiency and speed. It is an insulated gate bipolar transistor (IGBT) device, which belongs to the family of single transistors. The GT60 is a versatile component that can be used in a wide range of applications, such as induction heating, motor control, power-factor correction, DC-DC conversion, and solar power systems.
Application Field
The key application for the GT60 is in high temperature, high power switching. It is especially suitable for applications requiring fast switching of high-voltage AC, such as induction heating and motor control. It can also be used for current-source conversion, such as when converting from DC to AC or from AC to DC, as well as in power-factor correction systems.
In induction heating applications, the GT60 can help control the current flow for rapid and efficient heating. It can also be used for over-current and short-circuit protection to reduce the risk of damage to the heating system.
The GT60 is also highly suitable for applications such as motor control, DC-DC conversion, and solar power systems. It is ideal for controlling the speed and torque of electric motors, as it allows for precise and efficient switching of DC voltages. It can also be used for efficient energy storage in solar power systems. By using the GT60, the energy generated by a solar panel can be stored in a battery and used later, when required.
Working Principle
The GT60 is a three-terminal insulated gate bipolar transistor (IGBT) device, which means that it contains an insulated gate and a base-emitter region. The device works on the principle of minority carrier injection, by which a minority carrier current is injected into the base region of the transistor. This current then controls the flow of electrons (collector current), between the collector and emitter regions.
When a voltage is applied to the gate terminal, it generates an electric field that injects a special type of charge carrier (known as a majority carrier) into the base region. This majority carrier then controls the flow of current between the collector and emitter regions, allowing the device to switch voltages and currents with speed and efficiency.
The GT60 also provides excellent thermal characteristics. As the device is designed to minimize the power dissipated when switching voltages and currents, it can remain fully operational even in extremely high temperature environments.
Conclusion
The APT40GT60BRG (GT60) is an insulated gate bipolar transistor (IGBT) device, which belongs to the family of single transistors. It is highly versatile, and is suitable for a variety of applications, such as induction heating, motor control, power-factor correction, DC-DC conversion, and solar power systems. The device works on the principle of minority carrier injection, by which a minority carrier current is injected into the base region of the transistor, enabling fast and efficient switching of voltages and currents. The GT60 also provides excellent thermal characteristics, making it suitable for high temperature environments.
The specific data is subject to PDF, and the above content is for reference
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