APT40GR120B2D30 Discrete Semiconductor Products |
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Allicdata Part #: | APT40GR120B2D30-ND |
Manufacturer Part#: |
APT40GR120B2D30 |
Price: | $ 8.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 88A 500W TO247 |
More Detail: | IGBT NPT 1200V 88A 500W Through Hole TO-247-3 |
DataSheet: | APT40GR120B2D30 Datasheet/PDF |
Quantity: | 27 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 7.76160 |
10 +: | $ 6.98355 |
25 +: | $ 6.36275 |
100 +: | $ 5.74195 |
250 +: | $ 5.27640 |
500 +: | $ 4.81083 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 88A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 40A |
Power - Max: | 500W |
Switching Energy: | 1.38mJ (on), 906µJ (off) |
Input Type: | Standard |
Gate Charge: | 210nC |
Td (on/off) @ 25°C: | 22ns/163ns |
Test Condition: | 600V, 40A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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IGBTs are insulated gate bipolar transistors that are designed to work at higher voltages and with higher current capabilities than traditional metal oxide semiconductor field-effect transistors (MOSFETs). An IGBT is a combination of an insulated gate FET (IGFET) on the control side and a bipolar power transistor on the output side. An IGBT is essentially a voltage-controlled switch that can be used to block or control large amounts of electrical current. They are primarily used in high voltage and/or high power applications such as induction heating and motor control. The APT40GR120B2D30 IGBT is a single, insulated gate bipolar transistor (IGBT) that is suitable for use in a variety of high voltage, high power applications.
The APT40GR120B2D30 is designed with a 30A continuous collector current, a 1200V blocking voltage, and a 64mΩ maximum on-state resistance. It also has a maximum operating temperature of 175°C and a maximum current of 40A when applied in air. This particular IGBT specification is ideal for high power applications such as motor control, AC Drives, battery charging, and solar power systems. In motor control applications, the APT40GR120B2D30 can be used to switch large currents and voltages for both AC and DC motors.
The APT40GR120B2D30 IGBT is designed as an enhancement mode device that uses a gate voltage to switch the IGBT on and off. When the gate voltage is more negative than the threshold voltage, the transistor is in the off state and no current flows from the collector to the emitter. When the gate voltage is equal to or greater than the threshold voltage, the transistor is in the on state and current flows from the collector to the emitter. The on-state resistance of the transistor is a measure of the current transfer ratio and is determined by the emitter current.
The APT40GR120B2D30 IGBT is a single mode transistor, meaning that it only uses one voltage signal to enable current to flow in both directions between the collector and emitter. This type of IGBT is ideal for applications that require the ability to switch between high and low power levels, such as motor control applications. Single mode transistors can also be combined to create multi-mode transistors, which allow for more complex switching applications.
The APT40GR120B2D30 IGBT is a powerful and efficient solution for powering high voltage, high power applications in motor control, AC Drives, battery charging, and solar power systems. Its ability to maintain a low on-state resistance and its combination of single and multi-mode transistors makes it a versatile and reliable choice for controlling large amounts of electrical current.
The specific data is subject to PDF, and the above content is for reference
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