APT40N60JCU3 Allicdata Electronics
Allicdata Part #:

APT40N60JCU3-ND

Manufacturer Part#:

APT40N60JCU3

Price: $ 14.63
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 40A SOT-227
More Detail: N-Channel 600V 40A (Tc) 290W (Tc) Chassis Mount SO...
DataSheet: APT40N60JCU3 datasheetAPT40N60JCU3 Datasheet/PDF
Quantity: 1000
100 +: $ 13.30060
Stock 1000Can Ship Immediately
$ 14.63
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
FET Feature: --
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Description

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The APT40N60JCU3, also known as an advanced power MOSFET, is a type of field effect transistor (FET). It is a voltage-controlled, unipolar transistor, meaning that the current flows only in one direction - from the source to the drain. It is constructed from semiconductor material and utilizes a gate electrode to control the conductivity between the source and the drain. The APT40N60JCU3 is a high-powered device, offering a continuous drain current of 40A and a maximum drain source voltage of 600V. As well as this, it features a low on-resistance of 0.23Ω, making it an ideal choice for power applications.

FETs are commonly used in a variety of electronics applications, including power conditioning, power conversion and telecommunication. The APT40N60JCU3 is suited to a variety of power applications. By its nature as a high-power device, it can be used in power supplies, providing the necessary current for the load. It can also be used in inverters, where both AC and DC are needed, or to bridge power between two different power supply sources. Furthermore, it can be used in motor control, providing variable speeds or used to rectify circuits in motor switching.

The working principle behind FETs applies to the APT40N60JCU3. By introducing a voltage at the gate terminal, a field is created in the channel between the source and the drain terminal. This field increases or decreases the number of electrons available in the channel, allowing current to flow through or restricting it, depending on the voltage applied. This means that the current flowing through a FET can be controlled externally. The voltage necessary to switch the current flow is determined by the gate threshold voltage.

In conclusion, the APT40N60JCU3 is a high-power field effect transistor suitable for use in a variety of power applications. It can be used in power supplies, inverters, motor control and to bridge power between two different power supply sources. The working principle behind FETs is that a voltage applied at the gate terminal creates an electric field in the channel between the source and the drain terminal, determining the amount of current flowing through these terminals. This makes them an ideal choice for controlling large amounts of power.

The specific data is subject to PDF, and the above content is for reference

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