Allicdata Part #: | APT40GP90BG-ND |
Manufacturer Part#: |
APT40GP90BG |
Price: | $ 12.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 900V 100A 543W TO247 |
More Detail: | IGBT PT 900V 100A 543W Through Hole TO-247 [B] |
DataSheet: | APT40GP90BG Datasheet/PDF |
Quantity: | 29 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 11.01240 |
10 +: | $ 10.01320 |
25 +: | $ 9.26198 |
Series: | POWER MOS 7® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 900V |
Current - Collector (Ic) (Max): | 100A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 40A |
Power - Max: | 543W |
Switching Energy: | 825µJ (off) |
Input Type: | Standard |
Gate Charge: | 145nC |
Td (on/off) @ 25°C: | 16ns/75ns |
Test Condition: | 600V, 40A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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IGBT stands for Insulated Gate Bipolar Transistor. It is a type of transistor that combines the elements of both a MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) and a bipolar junction transistor (BJT). These two components are combined in one package to create a transistor-level device that offers high efficiency, high power density, and fast switching capabilities. The IGBT is a four-layer device, comprising two base PN junctions in addition to the two PN junctions of the MOSFET. This makes it advantageous over traditional BJTs, which require more layers to construct the same device.
The APT40GP90BG is an IGBT with rated voltage 600V, and has a low gate-source voltage so it is ideal for many applications like uninterruptible power supplies and solar inverters, welding and other industrial equipment. It features an SCR Emitter Structure with nickel PN junction to increase power density, as well as improved current capability. This device is manufactured using reverse-reaction field trenching to reduce thermal loss and increase the blocking voltage.
The working principle of the APT40GP90BG is based on the fact that when the IGBT gate is turned on, it allows electrical current to flow from the emitter of the PN junction (the base) to the collector, and then on through the load. When the gate is turned off, this electrical current is blocked from reaching the collector and going to the load.
The APT40GP90BG is designed for use in applications requiring high-power density and high switching frequencies, such as induction furnaces, battery chargers, chopper circuits and motor drives, as well as for AC motor controllers. It also has a wide voltage range so it can be used in various power applications, from small-scale to large-scale.
The IGBT is one of the most reliable and efficient devices in the business. Its high efficiency, high power density, and fast switching capabilities make it an ideal solution for many applications. The APT40GP90BG is a great example of the kind of IGBT device that can be used in more demanding applications, thanks to its improved current capability, reverse-reaction field trenching, and nickel PN junction.
The specific data is subject to PDF, and the above content is for reference
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