Allicdata Part #: | APT45GP120JDQ2-ND |
Manufacturer Part#: |
APT45GP120JDQ2 |
Price: | $ 28.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 75A 329W SOT227 |
More Detail: | IGBT Module PT Single 1200V 75A 329W Chassis Mount... |
DataSheet: | APT45GP120JDQ2 Datasheet/PDF |
Quantity: | 113 |
1 +: | $ 25.76070 |
10 +: | $ 24.09060 |
25 +: | $ 22.28030 |
100 +: | $ 20.88770 |
250 +: | $ 19.49520 |
Series: | POWER MOS 7® |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 329W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 45A |
Current - Collector Cutoff (Max): | 750µA |
Input Capacitance (Cies) @ Vce: | 4nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBT (Insulated Gate Bipolar Transistor) modules are increasingly being used as a key component in various applications in the present world. APT45GP120JDQ2 is one such IGBT module from IXYS Corporation (Advanced Power Technology (IXYS)) designed for high-side switch applications.
The APT45GP120JDQ2 module is designed for medium-current, medium-power applications. Its main features include low on-state resistance, low gate charge, for excellent conduction and switching performance, higher surge capability, higher temperature operation and fast recovery diodes for more robust and reliable operation in high-temperature environments. Also, it has a low output impedance current handling capability.
The VCE of the APT45GP120JDQ2 module is rated at 1200 V and can handle currents up to 45 amps. It contains six IGBT power modules, three N-Channel MOSFETs and three P-Channel MOSFETs. It can be used in 12Vdc power converter applications. These devices are ideal for use in automotive, industrial equipment and consumer electronics, as they provide better performance, improved reliability and higher efficiency.
The working principle behind an IGBT is simple- an N-channel MOSFET is used to control a PN junction, which forms a Bipolar junction transistor (BJT). The N-channel MOSFET acts as a switch, allowing a low current to pass when it is open and blocking a high current when it is closed. This enables the IGBT to switch a large amount of power quickly, making it ideal for power electronic applications.
The APT45GP120JDQ2 module provides high power efficiency and improved performance in high-power switching applications. Its built-in driving circuit for MOSFETs and diodes provides improved reliability and a low output impedance current handling capability. Its high-speed switching performance makes it suitable for high-frequency switching, including direct current drive, motor drive and AC motor drive control.
The module is suitable for various applications such as motor drives, automotive systems, UPS, LED lighting, home appliances, electric vehicle systems, and medical instruments, etc. It can be used in applications like switching regulators, AC and DC inverters, solar inverters, induction heaters, and industrial and control power systems.
The APT45GP120JDQ2 module is the perfect solution for a variety of high-power switching applications. Its low on-state resistance, low gate charge, and high surge capability ensure improved performance and reliability. Its high-speed switching performance makes it suitable for high-frequency switching and direct current drive applications. It is perfect for industrial, automotive, and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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