APT4012BVR

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The APT4012BVR is an advanced small signal n-channel enhancement mode power MOSFET optimized for use in DC-DC converter and low voltage analog switch applications. With low internal ON resistance and low threshold voltage, the APT4012BVR is capable of providing high efficiency in DC-DC converters, with excellent load and line regulation.

This product is a 100V N-Channel Power MOSFET, operating with a maximum drain current of 40A and a maximum drain-source voltage of 100V. Utilizing advanced processing techniques, including a low 750 mV threshold voltage and ultra-low internal on-resistance of 11.5 m Ohm, this device provides for excellent load and line regulation in DC-DC converter applications.

The structure of the APT4012BVR is the latest n-channel enhancement mode power MOSFET technology, which features a vertical structure on the semiconductor die. This advanced structure is designed to provide high current switching with excellent immunity to moisture and temperature. The package also features low inductance for minimal switching losses, as well as four independent lead terminals for improved thermal design flexibility.

The APT4012BVR is primarily used in DC-DC converters, as it provides low conduction losses and is tolerant of wide load conditions. It is also well suited for usage in audio amplifiers, power converters, electronic ballasts, and analog switches. It can also be used in automotive, communications, and consumer electronics applications.

The APT4012BVR operates by utilizing a drain-source voltage applied between the MOSFET channel and the drain terminal. When the voltage applied to the drain is greater than the threshold voltage, the body diode will be forward biased and cause the device to turn on. The body diode provides the device with a pre-bias necessary for fast switching.

At turn-on, the MOSFET will draw current from the gate until the voltage across the channel is fully materialized. It is important to note that the gate voltage must be greater than the threshold voltage for the device to turn on. This gate voltage is usually provided by an external gate driver circuit.

The drain-source capacitance of the MOSFET must also be taken into account when designing the DC-DC converter. This capacitance is proportional to the drain-source voltage, and it will cause the output voltage to droop when the load increases. This effect can be reduced by adding an external bootstrap capacitor to the gate circuit, which will allow the gate voltage to remain stable as the load increases.

The APT4012BVR is an excellent choice for DC-DC converter and low voltage switch applications, due to its low internal on-resistance and low threshold voltage. It is capable of providing high efficiency with excellent load and line regulation. Additionally, the package features low inductance for minimal switching losses, as well as four independent lead terminals for improved thermal design flexibility.

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