APT40GP90B2DQ2G Discrete Semiconductor Products |
|
| Allicdata Part #: | APT40GP90B2DQ2G-ND |
| Manufacturer Part#: |
APT40GP90B2DQ2G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT 900V 101A 543W TMAX |
| More Detail: | IGBT PT 900V 101A 543W Through Hole |
| DataSheet: | APT40GP90B2DQ2G Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | 0.00000 |
| Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 40A |
| Package / Case: | TO-247-3 Variant |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 600V, 40A, 4.3 Ohm, 15V |
| Td (on/off) @ 25°C: | 14ns/90ns |
| Gate Charge: | 145nC |
| Input Type: | Standard |
| Switching Energy: | 795µJ (off) |
| Power - Max: | 543W |
| Series: | POWER MOS 7® |
| Current - Collector Pulsed (Icm): | 160A |
| Current - Collector (Ic) (Max): | 101A |
| Voltage - Collector Emitter Breakdown (Max): | 900V |
| IGBT Type: | PT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors – IGBTs – Single:APT40GP90B2DQ2G is a high voltage IGBT module developed and produced by Assemtech. It belongs to their highly reliable AEVX series. The module is rated for 40 at 33V DC supply, up to 90A conduction current, and a maximum collector-emitter voltage of 2000V. This IGBT module is designed for high power applications in the industrial and automotive industries.
In the industrial industry, APT40GP90B2DQ2G can be used for general motor control systems such as elevator drives, air compressors, hoists, pumps, and more. Due to its large current capacity, it can also be used in AC inverter applications such as solar panel inverters and AC-DC chargers. Its wide operating temperature range also ensures that the IGBT module can remain efficient even under extreme conditions.
In the automotive industry, this IGBT module can be used in advanced driver assistance systems (ADAS) such as lane departure warning systems (LDW), advanced emergency braking systems (AEB), driver drowsiness detection systems, and other similar applications. It can also be used in electric vehicle applications such as motor drives and battery chargers.
APT40GP90B2DQ2G uses a vertical two-piece construction, with an insulated aluminum base plate featuring an innovative clamping system for effective thermal conduction. This innovation in thermal conduction enables the module to achieve faster switching and reduce power losses. The connection between the base plate and the case is designed to be mechanically strong and reliable.
This IGBT module utilizes the insulated gate bipolar transistor (IGBT) semiconductor technology, which uses two main components to control the current flow. The two elements are the emitter and collector semiconductors, which switch current on and off in a controlled manner by the application of an external voltage. This voltage, known as the gate voltage, is determined by the power device’s voltage rating.
When the gate voltage is applied, the current flow through the collector and emitter semiconductors is switched on and off to control the current in the circuit. The IGBT can be used to switch DC or AC currents and is characterized by fast switching capability and low power loss. The IGBT is also capable of high power switching and has a higher level of safety due to the insulated gate, which prevents any undesired current flow.
APT40GP90B2DQ2Gs IGBT module is designed with a standard package size, providing enhanced flexibility for integration into various applications. It is designed for improved efficiency and lower power losses at high frequency switching applications, making it suitable for uses in advanced motor control, energy converters, and other applications. Additionally, it has an under temperature protection feature to ensure safety, making it the perfect choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| APT4012BVR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 37A TO24... |
| APT45GR65SSCD10 | Microsemi Co... | 0.0 $ | 1000 | INSULATED GATE BIPOLAR TR... |
| APT43M60B2 | Microsemi Co... | 9.07 $ | 1000 | MOSFET N-CH 600V 45A T-MA... |
| APT43GA90B | Microsemi Co... | 5.55 $ | 41 | IGBT 900V 78A 337W TO-247... |
| APT40GLQ120JCU2 | Microsemi Co... | 26.19 $ | 1000 | POWER MOD 1200V 80A SOT22... |
| APT40GP60SG | Microsemi Co... | 8.13 $ | 1000 | IGBT 600V 100A 543W D3PAK... |
| APT47N65SCS3G | Microsemi Co... | 10.72 $ | 1000 | MOSFET N-CH 650V 47A TO-2... |
| APT45GR65B | Microsemi Co... | 4.68 $ | 57 | IGBT 650V 92A 357W TO-247... |
| APT41M80B2 | Microsemi Co... | 12.51 $ | 1000 | MOSFET N-CH 800V 43A T-MA... |
| APT44F80B2 | Microsemi Co... | 17.38 $ | 1 | MOSFET N-CH 800V 47A T-MA... |
| APT45GP120BG | Microsemi Co... | 14.68 $ | 17 | IGBT 1200V 100A 625W TO24... |
| APT41M80L | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 800V 43A TO-2... |
| APT40M75JN | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 56A ISOT... |
| APT40GL120JU2 | Microsemi Co... | 13.97 $ | 1000 | MOD IGBT 1200V 65A SOT-22... |
| APT41F100J | Microsemi Co... | 38.38 $ | 46 | MOSFET N-CH 1000V 41A SOT... |
| APT45GP120B2DQ2G | Microsemi Co... | 15.32 $ | 26 | IGBT 1200V 113A 625W TMAX... |
| APT40M42JN | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 86A ISOT... |
| APT40GR120B2SCD10 | Microsemi Co... | 12.51 $ | 1000 | IGBT 1200V 88A 500W TO247... |
| APT43F60L | Microsemi Co... | 9.19 $ | 1000 | MOSFET N-CH 600V 45A TO-2... |
| APT40M70JVFR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 53A SOT-... |
| APT48M80L | Microsemi Co... | -- | 99 | MOSFET N-CH 800V 48A TO-2... |
| APT40DQ60BCTG | Microsemi Co... | 3.54 $ | 27 | DIODE ARRAY GP 600V 40A T... |
| APT40GR120S | Microsemi Co... | -- | 26 | IGBT 1200V 88A 500W D3PAK... |
| APT40DR160HJ | Microsemi Co... | 13.79 $ | 365 | POWER MODULE FULL BRIDGE ... |
| APT44GA60B | Microsemi Co... | 0.0 $ | 1000 | IGBT 600V 78A 337W TO-247... |
| APT40M35JVFR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 93A SOT-... |
| APT40GL120JU3 | Microsemi Co... | 13.97 $ | 1000 | MOD IGBT 1200V 65A SOT-22... |
| APT40DQ120BCTG | Microsemi Co... | 0.0 $ | 1000 | DIODE ARRAY GP 1200V 40A ... |
| APT40GF120JRDQ2 | Microsemi Co... | 0.0 $ | 1000 | IGBT 1200V 77A 347W SOT22... |
| APT48M80B2 | Microsemi Co... | 14.07 $ | 1000 | MOSFET N-CH 800V 48A T-MA... |
| APT40M70LVFRG | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 400V 57A TO-2... |
| APT40DQ100BCTG | Microsemi Co... | 0.0 $ | 1000 | DIODE ARRAY GP 1000V 40A ... |
| APT40GP90B2DQ2G | Microsemi Co... | 0.0 $ | 1000 | IGBT 900V 101A 543W TMAXI... |
| APT40DC120HJ | Microsemi Co... | 104.02 $ | 1000 | RECT BRIDGE 40A 1200V SOT... |
| APT4M120K | Microsemi Co... | -- | 1000 | MOSFET N-CH 1200V 5A TO22... |
| APT47M60J | Microsemi Co... | 25.69 $ | 10 | MOSFET N-CH 600V 49A SOT-... |
| APT40DQ60BG | Microsemi Co... | -- | 4827 | DIODE GEN PURP 600V 40A T... |
| APT42F50B | Microsemi Co... | 9.76 $ | 100 | MOSFET N-CH 500V 42A TO-2... |
| APT40GR120B | Microsemi Co... | 6.52 $ | 1000 | IGBT 1200V 88A 500W TO247... |
| APT40DS04HJ | Microsemi Co... | 0.0 $ | 1000 | MOD DIODE 45V SOT-227Brid... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT
APT40GP90B2DQ2G Datasheet/PDF