APT45GR65BSCD10

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Transistors - IGBTs - Single

APT45GR65BSCD10 is a type of transistor,– insulated-gate bipolar transistors (IGBTs). These components are used to control electric current in numerous applications. IGBTs combine the best of both world’s, MOSFETs and BJTs, as they feature both a PNP-like and an NPN-like region, allowing it to turn a current flow “on” or “off” comparatively easily. APT45GR65BSCD10 is a single-pack IGBT that can be used in applications that require switching speed, low losses and high levels of integration.

Application Field

The APT45GR65BSCD10 is mainly used in applications with higher power levels, such as induction cookers, electric heaters, high-power motors, and AC power supplies. APT45GR65BSCD10 transistors are also used in solar inverters and static UPS systems. In addition, the IGBT is suited for the soft-switching of AC line-frequency loads such as welding transformers and electronic ballasts.

Working Principle

Inside the APT45GR65BSCD10, an N-channel insulated gate field-effect transistor (MOSFET) is wired as the input element, while a PNP bipolar junction transistor (BJT) is wired as the output. This combination of MOSFET and BJT allows the IGBT to switch much faster than an ordinary BJT. The insulated-gate MOSFET portion of the IGBT not only provides high switching speeds, but also enables the IGBT to handle large voltage drops.

The way the IGBT operates is through the movement of charge carriers, for example, electrons and holes, between the two terminals. The MOSFET section of the IGBT acts as the voltage controlled on/off switch. If a negative potential is applied to the IGBT’s gate, electrons are drawn away from the N-type silicon region and the current flow between the collector and emitter is turned off.

When a positive potential is applied to the gate of the IGBT, the electric field created drives electrons into the N-type silicon region, which decreases the resistance between the collector and emitter to a near zero level. The current between the collector and emitter is now turned on and electric current can flow through the IGBT.

This electric current contributes to the “on-state” voltage drop of the IGBT’s channel. To ensure energy efficiency, multiple IGBT devices can be connected in parallel to keep the device’s“on-state” voltage drop as low as possible.

Conclusion

The APT45GR65BSCD10 IGBT is a powerful and reliable transistor that can be used in applications that require higher power levels and fast switching speed. Its combination of a MOSFET and a BJT gives it both a low “on-state” voltage drop and high switching speed. While it can be used in a wide range of applications, it is most commonly used in electric cookers, hotplates and motors.

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