APT60GF120JRDQ3

Transistors - IGBTs - Modules

The APT60GF120JRDQ3 is an Insulated Gate Bipolar Transistor (IGBT) module from manufacturer APT with the latest technologies on the semiconductor market. It is designed to provide increased system power and wide range of switching frequencies due to its high voltage and current capacity and fast switching speed.

Moreover, this type of IGBT module features lower power dissipation, short circuit withstand capability and superior surge current specifications. An integral diode, also known as the freewheeling diode, helps conduct current in both forward and reverse direction when the transistor is switched off. This type of reverse current flow is referred to as freewheeling and helps reduce stress on the wire and improve system efficiency.

The APT60GF120JRDQ3 is the most advanced IGBT module available today and it can be used in a variety of applications. It is ideal for switch mode power supplies, motor drives, converters, rectifiers and inverters. It can also be used in telecom, medical and industrial equipment, renewable energy and other related areas.

Being a three-terminal integrated structure, the APT60GF120JRDQ3 consists of an IGBT chip and an antiparallel freewheeling diode, mounted on the same substrate of Al2O3. This type of module power dissipates large power losses related to voltage swings and provides a high-speed operation based on short conduction and switching times.

The working principle of the APT60GF120JRDQ3 is similar to a conventional MOSFET with an insulated gate connected to a N-type channel. The gate current is provided through the insulated gate, allowing the formation of an inversion channel immediately. The positive current flow is conducted through the collector and negative current flow through the emitter. This leads to the formation of a bipolar transistor or IGBT in which the conductance of the N-type channel is controlled by the gate current.

To ensure a long-life operation, this IGBT module is equipped with advanced technologies such as the monolithically integrated chip and its dedicated cooling behavior which minimizes the use of thermal energy spreaders, increasing the energy efficiency of the system. Moreover, the module’s temperature rise is limited, eliminating the necessity of any additional protective implementation.

In conclusion, the APT60GF120JRDQ3 IGBT module is ideal for system requirements that require a high voltage and current handling capability, fast switching speeds, low to medium power dissipation and low switching loss. The monolithically integrated chip ensures its lifetime in most applications and its advanced technologies increase the system’s energy efficiency.