APT65GP60L2DQ2G

Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 65A
Package / Case:	TO-264-3, TO-264AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 65A, 5 Ohm, 15V
Td (on/off) @ 25°C:	30ns/90ns
Gate Charge:	210nC
Input Type:	Standard
Switching Energy:	605µJ (on), 895µJ (off)
Power - Max:	833W
Series:	POWER MOS 7®
Current - Collector Pulsed (Icm):	250A
Current - Collector (Ic) (Max):	198A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction
Transistors are a type of solid-state electronic component made of semiconductor materials. They can be used to both amplify and switch electronic signals, making them ideal for electronic applications, such as amplifiers, digital logic circuits, and voltage regulators. Among transistors, IGBTs (Insulated Gate Bipolar Transistors) are considered the most powerful, while single IGBTs are mostly used in specialized applications such as in high-power switching circuits and uninterruptible power supplies. The APT65GP60L2DQ2G is a single IGBT that has been widely used in commercial and industrial applications due to its superior performance and long-term reliability.

Application Field
The APT65GP60L2DQ2G is a single IGBT manufactured by Advanced Power Technology (APT). It is a highly efficient, current-controlled device, suited to applications requiring high power, voltage, and current capabilities. This device is an ideal choice for applications in the telecommunication, automotive, industrial, and home appliance industries.In the telecommunications industry, the APT65GP60L2DQ2G can be used in switching circuits, and in the transmission and distribution of high power, where its high voltage and current capabilities can be fully utilized. In the automotive industry, the APT65GP60L2DQ2G can be used in automotive inverters and motor drives for improved energy efficiency. As this device features a high switching speed, high breakdown voltage, and low operating temperature, it is suitable for automotive applications such as traction drives and hybrid electric vehicles.In the industrial sector, the APT65GP60L2DQ2G can be found in power conversion circuits, as well as in uninterruptible power supply (UPS) systems and welding machines. These devices offer high-efficiency power conversion, making them well suited to industrial applications.The APT65GP60L2DQ2G is also suitable for home applications, such as TVs and air conditioners. As the device offers excellent switching performance and low on-state losses, it is ideal for home applications that require low power consumption.

Working Principle
The APT65GP60L2DQ2G is a single IGBT that works by combining the properties of a metal oxide semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). The device consists of two vertical crystal layers: an n-type layer, and a p-type layer. The n-type layer is the "gate" of the device, and the p-type layer is the "collector".A voltage is applied to the gate, which causes holes to be injected from the p-type collector into the n-type gate. This creates an inversion layer between the two layers, resulting in a low-resistance channel between the collector and gate terminals of the device. This reduces the on-state resistance of the device, making it suitable for high-current switching applications.The IGBT also utilizes an insulated gate structure, meaning the gate is completely isolated from the rest of the device. This allows the gate to be controlled more accurately, resulting in lower switching losses and improved electrical noise immunity.

Conclusion
The APT65GP60L2DQ2G is a highly efficient, current-controlled single IGBT, suitable for a wide range of commercial and industrial applications, including telecommunications, automotive, industrial, and home appliances. Its combination of high-voltage and current capabilities, insulated gate structure, and low switching losses make it an ideal choice for applications where high-power switching, high-efficiency power conversion, and long-term reliability are required.

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