Allicdata Part #: | APT6040BNG-ND |
Manufacturer Part#: |
APT6040BNG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 18A TO247AD |
More Detail: | N-Channel 600V 18A (Tc) 310W (Tc) Through Hole TO-... |
DataSheet: | APT6040BNG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 310W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2950pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | POWER MOS IV® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The APT6040BNG is a surface-mountable enhancement mode N-channel junction field effect transistor (JFET) in the DFN package. It is used in applications such as battery powered instruments, portable medical equipment, and low power circuits. The device has an extremely low gate threshold voltage and on-resistance ratings. Since it is a single device, it provides cost savings as well as board space savings. This article will discuss the application field and working principle of the APT6040BNG.
The APT6040BNG is suitable for low voltage applications including negative voltage circuits. It is a great option for both battery-powered instruments and portable medical equipment. The device has a low power dissipation and can be used in battery-powered and portable applications such as sensors, wireless handsets and other low voltage devices. It features a high gain resulting in comparatively low on-state resistance and excellent reverse transfer characteristics. Electrical characteristics such as low gate threshold voltage and low off-state leakage current make the APT6040BNG an ideal device for use in low-power, low-voltage circuits.
The device’s working principle is based on the fact that in a JFET, a reverse-biased p-n junction under the gate region permits an external electric field to control the drain-source current. The source and drain regions are P-doped and N-doped respectively. When the gate is activated, the potential of the electrons in the N-doped region is reduced. This reduces the depletion region width between the two charge regions and increases the number of electron channels in the P-region. The number of electron channels will then determine the current flow between the two regions. Thus, any changes in the gate potential will cause a corresponding change in the drain current.
The APT6040BNG has an extremely low gate threshold voltage. This is due to the construction of the gate in which a gate oxide layer is formed at the boundary of the source and drain depletion regions. This reduces the voltage required to create a conducting channel between the source and drain. It also minimizes gate leakage current. Furthermore, the APT6040BNG has excellent on-resistance ratings which further contributes to the device’s low power dissipation and makes it suitable for battery-operated systems.
In conclusion, the APT6040BNG is a single surface-mountable device designed for use in portable and battery-powered devices. It has a low gate threshold voltage and on-resistance ratings, outstanding reverse transfer characteristics, and excellent leakage current ratings. The APT6040BNG’s working principle is based on the fact that in a JFET, a reverse-biased p-n junction under the gate region permits an external electric field to control the drain-source current. This article has discussed the application field and working principle of the APT6040BNG.
The specific data is subject to PDF, and the above content is for reference
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