Allicdata Part #: | APT60M75JLL-ND |
Manufacturer Part#: |
APT60M75JLL |
Price: | $ 37.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 58A SOT-227 |
More Detail: | N-Channel 600V 58A (Tc) 595W (Tc) Chassis Mount IS... |
DataSheet: | APT60M75JLL Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 33.98090 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 595W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8930pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 195nC @ 10V |
Series: | POWER MOS 7® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT60M75JLL is a single N-channel Advanced Power Technology (APT) A-FET (Field Effect Transistor). This FET has the ability to handle up to 60 amps and supports a drain-source voltage of up to 75 volts. The APT60M75JLL is a commonly used switch allowing the switching on and off of high power components such as motors, solenoids and inductive loads in applications such as motor control and switching power supplies. In addition, the FET is suitable for use in high speed switching applications, high efficiency power management and hot-swapping designs.
The FET is constructed with a single N-channel MOSFET (Metal Oxide Field-Effect Transistor). In basic terms, an N-channel MOSFET works by using voltage to control the current flowing through an electrical component, such as a motor or other load. The APT60M75JLL is capable of fast switching and has a low on-state resistance, allowing great efficiency when switching on high-power loads. Furthermore, the FET is resistant to thermal breakdown, meaning that it can handle temperatures up to 150 degrees Celsius without issue.
When switched on, the APT60M75JLL has two main potentials - the drain-source voltage and the gate voltage. The gate voltage controls the amount of current that is allowed to pass between the drain and the source (the load). Depending on the amount of gate voltage, the amount of current that can flow through the FET is varied. When the voltage at the gate is low, the FET is switched off; when the voltage at the gate is high, the FET is switched on.
In addition to the gate voltage, the APT60M75JLL also has a drain-source voltage. This voltage determines the maximum current that can be allowed to pass through the FET. It is important to ensure that the voltage applied to the drain-source of the APT60M75JLL is not higher than the maximum voltage rating of the FET (75V). If the voltage is too high, the FET may be damaged, leading to potential failure of the device.
The APT60M75JLL is a versatile FET that can be used in a variety of applications. It is commonly used in power switching, motor control and high efficiency power management. It is especially suitable for hot-swapping designs, allowing rapid and efficient control of high power components without issue. The low on-state resistance benefits applications that require fast switching at high currents, making the APT60M75JLL an ideal choice for these applications.
In summary, the APT60M75JLL is a single N-channel MOSFET-based FET that offers efficient power switching and control. It can handle up to 60 amps of drain-source voltage and is suitable for use in high-temperature environments. Its low on-state resistance makes it suitable for high speed switching and its high voltage rating allows it to be used in high-power applications. In addition, the FET is suitable for use in hot-swapping designs, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APT64GA90B | Microsemi Co... | 6.25 $ | 1000 | IGBT 900V 117A 500W TO247... |
APT68GA60B2D40 | Microsemi Co... | 7.34 $ | 1000 | IGBT 600V 121A 520W TO-24... |
APT68GA60LD40 | Microsemi Co... | 7.34 $ | 1000 | IGBT 600V 121A 520W TO-26... |
APT64GA90LD30 | Microsemi Co... | 7.77 $ | 1000 | IGBT 900V 117A 500W TO-26... |
APT65GP60L2DQ2G | Microsemi Co... | 13.1 $ | 1000 | IGBT 600V 198A 833W TO264... |
APT60GT60BRG | Microsemi Co... | 8.05 $ | 3913 | IGBT 600V 100A 500W TO247... |
APT65GP60B2G | Microsemi Co... | 14.83 $ | 119 | IGBT 600V 100A 833W TMAXI... |
APT68GA60B | Microsemi Co... | 7.11 $ | 23 | IGBT 600V 121A 520W TO-24... |
APT64GA90B2D30 | Microsemi Co... | 9.41 $ | 2 | IGBT 900V 117A 500W TO-24... |
APT60M75JFLL | Microsemi Co... | 37.44 $ | 10 | MOSFET N-CH 600V 58A SOT-... |
APT60M60JFLL | Microsemi Co... | 53.33 $ | 9 | MOSFET N-CH 600V 70A SOT-... |
APT66M60L | Microsemi Co... | 13.65 $ | 1000 | MOSFET N-CH 600V 70A TO-2... |
APT66M60B2 | Microsemi Co... | -- | 1000 | MOSFET N-CH 600V 66A T-MA... |
APT66F60L | Microsemi Co... | 13.96 $ | 1000 | MOSFET N-CH 600V 70A TO-2... |
APT60N60SCSG | Microsemi Co... | 14.11 $ | 1000 | MOSFET N-CH 600V 60A D3PA... |
APT6017LFLLG | Microsemi Co... | 16.18 $ | 15 | MOSFET N-CH 600V 35A TO-2... |
APT60M75L2FLLG | Microsemi Co... | 31.16 $ | 1000 | MOSFET N-CH 600V 73A TO-2... |
APT60M75JLL | Microsemi Co... | 37.38 $ | 1000 | MOSFET N-CH 600V 58A SOT-... |
APT60M75JVR | Microsemi Co... | 44.07 $ | 1000 | MOSFET N-CH 600V 62A SOT-... |
APT60M60JLL | Microsemi Co... | 49.12 $ | 1000 | MOSFET N-CH 600V 70A SOT-... |
APT60D60BG | Microsemi Co... | -- | 337 | DIODE GEN PURP 600V 60A T... |
APT60D100BG | Microsemi Co... | 4.8 $ | 201 | DIODE GEN PURP 1KV 60A TO... |
APT60DQ60BG | Microsemi Co... | -- | 2800 | DIODE GEN PURP 600V 60A T... |
APT60D120BG | Microsemi Co... | -- | 229 | DIODE GEN PURP 1.2KV 60A ... |
APT60DQ100BG | Microsemi Co... | -- | 118 | DIODE GEN PURP 1KV 60A TO... |
APT60M75JVFR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 62A SOT-... |
APT60M75L2LLG | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 73A TO-2... |
APT60M80JVR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 55A SOT-... |
APT60M80L2VRG | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 65A TO-2... |
APT6M100K | Microsemi Co... | -- | 1000 | MOSFET N-CH 1000V 6A TO-2... |
APT6030BN | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 23A TO24... |
APT6040BN | Microsemi Co... | -- | 1000 | MOSFET N-CH 600V 18A TO24... |
APT6040BNG | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 18A TO24... |
APT60S20B2CTG | Microsemi Co... | 6.99 $ | 1000 | DIODE ARRAY SCHOTTKY 200V... |
APT60D60LCTG | Microsemi Co... | -- | 13 | DIODE ARRAY GP 600V 60A T... |
APT66F60B2 | Microsemi Co... | 16.68 $ | 19 | MOSFET N-CH 600V 70A TO-2... |
APT60DQ60BCTG | Microsemi Co... | -- | 6134 | DIODE ARRAY GP 600V 60A T... |
APT60S20BG | Microsemi Co... | 4.1 $ | 1511 | DIODE SCHOTTKY 200V 75A T... |
APT60D40BG | Microsemi Co... | -- | 11 | DIODE GEN PURP 400V 60A T... |
APT60N60BCSG | Microsemi Co... | -- | 934 | MOSFET N-CH 600V 60A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...