APT60M75JLL Allicdata Electronics
Allicdata Part #:

APT60M75JLL-ND

Manufacturer Part#:

APT60M75JLL

Price: $ 37.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 58A SOT-227
More Detail: N-Channel 600V 58A (Tc) 595W (Tc) Chassis Mount IS...
DataSheet: APT60M75JLL datasheetAPT60M75JLL Datasheet/PDF
Quantity: 1000
10 +: $ 33.98090
Stock 1000Can Ship Immediately
$ 37.38
Specifications
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT60M75JLL is a single N-channel Advanced Power Technology (APT) A-FET (Field Effect Transistor). This FET has the ability to handle up to 60 amps and supports a drain-source voltage of up to 75 volts. The APT60M75JLL is a commonly used switch allowing the switching on and off of high power components such as motors, solenoids and inductive loads in applications such as motor control and switching power supplies. In addition, the FET is suitable for use in high speed switching applications, high efficiency power management and hot-swapping designs.

The FET is constructed with a single N-channel MOSFET (Metal Oxide Field-Effect Transistor). In basic terms, an N-channel MOSFET works by using voltage to control the current flowing through an electrical component, such as a motor or other load. The APT60M75JLL is capable of fast switching and has a low on-state resistance, allowing great efficiency when switching on high-power loads. Furthermore, the FET is resistant to thermal breakdown, meaning that it can handle temperatures up to 150 degrees Celsius without issue.

When switched on, the APT60M75JLL has two main potentials - the drain-source voltage and the gate voltage. The gate voltage controls the amount of current that is allowed to pass between the drain and the source (the load). Depending on the amount of gate voltage, the amount of current that can flow through the FET is varied. When the voltage at the gate is low, the FET is switched off; when the voltage at the gate is high, the FET is switched on.

In addition to the gate voltage, the APT60M75JLL also has a drain-source voltage. This voltage determines the maximum current that can be allowed to pass through the FET. It is important to ensure that the voltage applied to the drain-source of the APT60M75JLL is not higher than the maximum voltage rating of the FET (75V). If the voltage is too high, the FET may be damaged, leading to potential failure of the device.

The APT60M75JLL is a versatile FET that can be used in a variety of applications. It is commonly used in power switching, motor control and high efficiency power management. It is especially suitable for hot-swapping designs, allowing rapid and efficient control of high power components without issue. The low on-state resistance benefits applications that require fast switching at high currents, making the APT60M75JLL an ideal choice for these applications.

In summary, the APT60M75JLL is a single N-channel MOSFET-based FET that offers efficient power switching and control. It can handle up to 60 amps of drain-source voltage and is suitable for use in high-temperature environments. Its low on-state resistance makes it suitable for high speed switching and its high voltage rating allows it to be used in high-power applications. In addition, the FET is suitable for use in hot-swapping designs, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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