APT60M75JFLL

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The APT60M75JFLL is a 60V N-Channel Power Trench MOSFET from Diodes Incorporated that features low gate charge, low RDS(on) for higher efficiency at higher frequencies. This device is ideal for use in synchronous buck applications. It is available in Surface Mount (SMD) package form and provides a great value solution for end applications.

Introduction

The APT60M75JFLL is a low gate charge, low RDS(on) MOSFET that comes in Surface Mount (SMD) package form from Diodes Incorporated. This device has an RDS(on)Max of 7.5 mOhm, a 7.5A continuous drain current, and a maximum drain source voltage of 60V. Its low gate charge and low on-resistance help provide higher efficiency at higher frequencies. It\'s optimized for use in synchronous buck applications, helping users to reduce component cost by replacing a two-FET solution with one device.

Application Field

The APT60M75JFLL is designed for a wide variety of applications including synchronous buck dc-dc converters, point of load converters, high frequency diode replacements, power management in modern ICs, and high current point-of-load regulators. It can be used in computers, consumer electronics, audio amplifiers, and other power supply related applications. It is also suitable for automotive and telecom applications where quality, reliability and cost are important factors.

Working Principle

The APT60M75JFLL is an N-Channel Power Trench MOSFET with a specific construction that allows for it’s low gate charge and low RDS(on). It consists of a main body and an inner gate, which can be thought of as a combination of two FETs in parallel. The main body of the device controls the voltage while the inner gate controls the current. This results in a very low on- resistance and a minimized gate charge, which helps improve efficiency at higher frequencies.

The device has a control gate voltage, which is the voltage applied to the inner gate. When the voltage is increased, the current capacity of the device increases as well. This in turn increases the drain-source resistance (RDS(on)), helping to limit the current flow. When the gate voltage falls, the current decreases and the resistance goes back to its original value. This feature allows the device to switch quickly and efficiently.

Conclusion

The APT60M75JFLL from Diodes Incorporated is a 60V N-Channel Power Trench MOSFET that features low gate charge, low RDS(on) for higher efficiency at higher frequencies. It is optimized for synchronous buck applications and suitable for a wide range of applications, including computers, consumer electronics, audio amplifiers, and other power supply related applications. Its unique construction gives it low gate charge and low RDS(on), allowing it to switch quickly and efficiently.

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