Allicdata Part #: | APT6017LFLLG-ND |
Manufacturer Part#: |
APT6017LFLLG |
Price: | $ 16.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 35A TO-264 |
More Detail: | N-Channel 600V 35A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | APT6017LFLLG Datasheet/PDF |
Quantity: | 15 |
1 +: | $ 14.71050 |
10 +: | $ 13.37550 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 [L] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | POWER MOS 7® |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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APT6017LFLLG is a N-channel Enhancement Mode Field Effect Transistor (FET) designed specifically to improve upon the performance of existing MOSFET’s. This part is of the newest class of MOSFETs and is designed to use the most current technologies in order to improve the performance, including lower leakage current and improved output power capability.
APT6017LFLLG is a single package N-Channel MOSFET that is especially suited for power switching applications that require high performance. This part also includes a floating gate structure, which allows for a more controlled turn-on of the MOSFET and a higher efficiency than traditional MOSFETs. The floating gate structure also provides for a faster turn-off of the MOSFET, resulting in improved power efficiency.
The applications of APT6017LFLLG are in various switching circuits, such as in power supplies, DC-DC converters, and motor control applications. This MOSFET is also well-suited to DC applications as well as AC applications, including rectifiers, voltage regulators, and power AC circuits. With its high performance, this MOSFET is also suitable for low-noise, high-precision systems.
The working principle of the APT6017LFLLG is based on four distinct areas. First, the device’s gate resistance is extremely low, allowing current to flow through its channel at a much lower voltage than other MOSFETs. Second, the floating gate structure provides more control over the turn-on and turn-off of the MOSFET. Third, the breakdown voltage of the device is very low, making it suitable for low voltage applications. Fourth, the package of the device incorporates an extended drain region, allowing for a higher current flow than possible with other MOSFETs.
Overall, APT6017LFLLG is a high-performance single package N-Channel MOSFET that is used extensively in various power switching applications. This part incorporates a floating gate structure, low gate resistance, and low breakdown voltage to create a device that is both efficient and reliable. This MOSFET is suitable for a variety of both AC and DC applications, making it a great choice for switching and power control systems.
The specific data is subject to PDF, and the above content is for reference
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