APT64GA90LD30

Power - Max:	500W
Supplier Device Package:	TO-264 [L]
Package / Case:	TO-264-3, TO-264AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	600V, 38A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:	18ns/131ns
Gate Charge:	162nC
Input Type:	Standard
Switching Energy:	1192µJ (on), 1088µJ (off)
Series:	POWER MOS 8™
Vce(on) (Max) @ Vge, Ic:	3.1V @ 15V, 38A
Current - Collector Pulsed (Icm):	193A
Current - Collector (Ic) (Max):	117A
Voltage - Collector Emitter Breakdown (Max):	900V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The APT64GA90LD30 is a high-performance Insulated Gate Bipolar Transistor (IGBT) that is designed for high-end applications requiring high levels of power and efficiency. IGBTs are semiconductor devices that combine the switching characteristics of transistors with the control capabilities of bipolar transistors. They are commonly used in power supply designs, motor controllers and other applications that require high levels of power and switching efficiency. The APT64GA90LD30 is designed to provide a high-speed switching solution with an excellent on-state current density. The device is specifically designed to be implemented into high-power devices such as servo motors and inverters, as well as in high-efficiency switching applications such as lighting and power supplies. The APT64GA90LD30 is a single IGBT, which means that it has only one conductive path between its Gate and Emitter, and only one semiconductor layer to control current flow. The device contains a single-layer Gallium Arsenide (GaAs) substrate, which consists of two layers of Gallium and one layer of Arsenide. The device is composed of two semiconductor layers in a vertical arrangement, which allows for higher current density and faster switching speed. The GaAs substrate also helps reduce gate-to-emitter capacitance and on-state gate resistance, which increases the device\'s efficiency. The APT64GA90LD30 operates in a very simple manner. As the Gate voltage is increased, it causes current to flow through the device between the Emitter and Collector. This current flow is controlled by adjusting the Gate voltage. If the Gate voltage is increased, more current will flow, while a reduction in voltage will reduce the current flow. The APT64GA90LD30 is designed to provide a high efficiency, high power solution. It is designed to handle a wide range of switching applications, from high-powered motors to lighting applications, and its Gallium Arsenide substrate helps reduce switching losses. This allows the device to provide a very cost-effective solution for high-end applications. Overall, the APT64GA90LD30 is a reliable and efficient IGBT device that is designed to provide a high-performance solution for a variety of applications. Its single-layer Gallium Arsenide substrate and fast switching speeds make it an extremely cost-effective solution for high-end applications. Furthermore, its ability to provide high-efficiency and high-power makes it suitable for a wide range of applications.

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