Allicdata Part #: | APT60M80JVR-ND |
Manufacturer Part#: |
APT60M80JVR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 55A SOT-227 |
More Detail: | N-Channel 600V 55A (Tc) 568W (Tc) Chassis Mount IS... |
DataSheet: | APT60M80JVR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 568W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 870nC @ 10V |
Series: | POWER MOS V® |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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APT60M80JVR is a single N-Channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is specially suited for high power applications. It is mostly used in power converters and battery charger applications. It is designed to have a high current carrying capability, low ON-state resistance, and low input capacitance. It is also a fast switching device that has high frequency switching capability.
The application field of the APT60M80JVR is in medium-voltage circuits both in high-frequency switching applications and power converters. It is an ideal power device for lighting and general motor control applications. This device can be used in both hard and soft switching application in medium voltage and high power converters. Its large area of applications makes it versatile in a broad range of sectors like Automotive, Consumer Electronics and Industrial Devices.
The working principle of the APT60M80JVR is based on the MOSFET technology. The MOSFET consists of two back-to-back MOS transistors, the source and the gate which work together to control and switch on the current flow in response to the voltage applied. The two transistors work in coordination and act as a ‘switch’, meaning that when turned on, current is allowed to flow from source to drain. The Gate controls the output and is driven by voltage applied to it.
The main feature of the APT60M80JVR is its low ON-state resistance which ensures high efficiency and low power loss. This is achieved due to its high current carrying capability and low input capacitance which makes the device able to switch on fast and with minimum power loss. This makes it suitable for high frequency switching applications and power converters. It is also designed to have a large area, making it great for dissipating large amounts of heat. Furthermore, the device has an additional body diode which helps to reduce the amount of external components in the circuit, thus further increasing the power efficiency of the device.
The APT60M80JVR is an ideal device for medium and high power applications which require switching or power conversion. Its low input capacitance, low on-state resistance and high current carrying capability make it suitable for all types of medium voltage applications. Furthermore, its body diode helps to reduce the overall circuit complexity and increases the power efficiency. This makes it a versatile device which can be used in a range of sectors from automotive to lighting, and from industrial devices to consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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