APT66M60B2

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APT66M60B2 is a high-power, N-channel trench power MOSFET built by Advanced Power Technology (APT). This transistor features a high breakdown voltage of 60V and a maximum drain current of 66A. The APT66M60B2 is ideally suited for medium and high-power switching applications, including power conversion systems and motor drives. In addition, the APT66M60B2 is suitable for audio amplifiers, automated test equipment, and various circuit protection applications.

The APT66M60B2 is a single, N-channel power MOSFET. It is constructed using a double-diffused trench structure, and is designed to provide excellent performance and reliability. The APT66M60B2 offers a high-temperature operation, with a maximum junction temperature rating of 150°C. The device also features high avalanche energy density, good immunity to secondary breakdown and fast reverse recovery time. The APT66M60B2 also has a low ESR and low gate charge, which makes it suitable for high-speed switching applications.

The APT66M60B2 is available in a TO-220AB package, and is also available in through-hole and surface mount packages. The APT66M60B2 is also available in different gate and drain lead options. The device is also RoHS compliant, and is compatible with lead-free assembly processes.

The APT66M60B2 is ideal for a variety of medium and high-power switching applications. It can be used in power conversion systems such as DC-DC converters and AC-DC power supplies. The device is also suitable for motor drives, audio amplifiers, test equipment and various circuit protection applications. The device is capable of handling high-current applications, and is designed to operate at high temperatures.

The working principle of the APT66M60B2 is based on the principle of voltage-controlled conductivity. The device is typically used in the source-follower configuration, where the source the source voltage is controlled by the applied gate voltage. When a positive voltage is applied to the gate, the drain-source voltage of the MOSFET will be lower than the applied gate-source voltage, allowing the MOSFET to conduct. The APT66M60B2 is especially suitable for high-voltage, high-current switching applications, where low on-state resistance is needed.

In summary, the APT66M60B2 is a high-power, N-channel power MOSFET designed to handle high-power switching applications. The device features a high breakdown voltage of 60V and a maximum drain current of 66A. It is available in a TO-220AB package, and is suitable for use in a wide range of power conversion, motor drive, audio amplifier, test equipment, and circuit protection applications. The device features a low ESR and low gate charge, which makes it suitable for high-speed switching applications.

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