APT6M100K

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220 [K]
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	225W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1410pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.5 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APT6M100K is a type of Field Effect Transistor (FET) known as a MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. It is a type of single-pole, single-throw FET, which is used for various applications including voltage and power amplification, small signal switching and driving LED’s.The APT6M100K is a N-channel enhancement mode MOSFET and is specifically designed for high performance applications. It is a highly efficient device, offering low on-resistance with very little gate-to-source charge, enabling smooth and predictable control of the switching process.The APT6M100K is constructed using a two-terminal insulated gate, with the electrodes being the source and the drain. The gate electrode is the control element of the MOSFET and when a voltage is applied to the gate, it causes the source to be attracted to the drain or repelled from it. This changes the electrical characteristics of the device in order to fully switch on or off the electrical charge.In the case of the APT6M100K, the drain to source breakdown voltage is 100V, with a maximum drain current of 6A. The on-state resistance is low, meaning that the device dissipates lower power when in the on-state and it has a high gain.The APT6M100K is designed to work in a variety of applications, including linear voltage regulation, and as power MOSFETs in switching power converters and motor control circuits. It is also suitable for use in air compressors, switching power supplies, and lighting control networks.In switching power converters, the APT6M100K can be used to decrease switching losses, minimize conduction losses, reduce switching noise, and increase power density. It is important to consider the current carrying capability of the device, as this is dependent on its on-state resistance and the heat it can dissipate. Additionally, for power MOSFETs, gate lag can also be a consideration, as this can affect circuit performance.The APT6M100K is available in a single package with a straight leads, making it easy to use in a variety of applications. They are also relatively inexpensive when compared to other power MOSFETs, making them a good choice for many projects.In summary, the APT6M100K is a type of single-pole, single-throw FET designed for high performance applications. It offers low on-state resistance, high gain, low switching losses and a maximum drain current of 6A. The device is suitable for a variety of applications, including linear voltage regulation, switching power converters, motor control circuits and lighting control networks.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description