
Allicdata Part #: | APTGF100A120TG-ND |
Manufacturer Part#: |
APTGF100A120TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MOD IGBT NPT PHASE LEG SP4 |
More Detail: | IGBT Module NPT Half Bridge 1200V 135A 568W Chassi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 135A |
Power - Max: | 568W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 100A |
Current - Collector Cutoff (Max): | 350µA |
Input Capacitance (Cies) @ Vce: | 6.9nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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APTGF100A120TG is a module of insulated gate bipolar transistors (IGBT) developed by Infineon, which belongs to the family of IGBTs and transistors. By combining the advantages of both MOS and bipolar transistors, the IGBT achieves great improvement in switching performance. The device works better, needs less heat and takes up less space, making the APTGF100A120TG particularly applicable for the high frequency switching applications.
The APTGF100A120TG adopts an IGBT module package, which includes two conduction terminal and two gate terminals. The insulated gate is connected to the gate via a diode; thus, when the gate terminal is opened, the diode begins to conduct electricity, which helps to reduce the delays and losses in the switching process. The use of this module helps to reduce the total number of switching components and provides superior operational efficiency.
APTGF100A120TG works on a principle of electrical current conduction and controlled voltage conduction. The device has two different operating states. Firstly, when the voltage applied to the gate is higher than a specific applied voltage, the current will be transferred from the drain to the source and the transistor will be ‘on’ and the device will be conducting. The second state occurs when the voltage applied to the gate is lower than the applied voltage. In this state, the current does not flow from the drain to the source and the transistor is ‘off’ and the device is in the state of non-conduction.
APTGF100A120TG has numerous advantages over traditional MOSFET and bipolar transistors. These advantages include improved switching performance, greater energy efficiency, reduced heat losses, and better reliability in comparison with traditional devices. APTGF100A120TG has the ability to perform in a wide range of temperature and frequency conditions, making it well-suited for applications where temperature variation and high frequency operation can affect performance. Its smaller size makes the device easier to install and maintain, while improving overall system space and weight efficiency.
The APTGF100A120TG is widely used in switching purposes, such as motor control, automotive systems, and power circuits. Its superior performance makes it ideal for high frequency applications and it is highly reliable as well. The module is also suitable for consumer appliances, especially for circuits which require high power efficiency. The device has a superior working life and can be used for many years with minimal maintenance. APTGF100A120TG is widely used for HVAC systems, industrial applications, and renewable energy systems such as wind turbines and solar panels.
In conclusion, the APTGF100A120TG is an excellent IGBT module offering superior energy efficiency, enhanced switching speed, and superior performance in high frequency applications. As it combines the advantages of both bipolar and MOSFET transistors, it is highly reliable and can be used for various applications with minimal maintenance requirements. The device is widely used in high-power applications, motor control, automotive systems, and HVAC systems, among others.
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