APTGLQ25H120T2G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Full Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Power - Max:	165W
Vce(on) (Max) @ Vge, Ic:	2.42V @ 15V, 25A
Current - Collector Cutoff (Max):	50µA
Input Capacitance (Cies) @ Vce:	1.43nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP2

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Introduction

The APTGLQ25H120T2G is a popular model within the IGBT Modules family of transistors. IGBT Modules are used in a variety of applications, from automotive and transportation to industrial applications, and beyond. This article aims to explore the application field and working principle of the APTGLQ25H120T2G.

Application Field

The APTGLQ25H120T2G is a powerful IGBT module that is suitable for a wide range of applications. Its impressive power-switching capabilities make it an excellent choice for industrial applications such as motor drives, UPS, welding machines, and HVAC systems. Furthermore, it can be used in high-power applications such as renewable energy systems, motor control, and power conversion.For automotive and transportation applications, the APTGLQ25H120T2G can be used in electric vehicles, hybrid electric vehicles, and autonomous vehicles, amongst others. Its superior power-switching performance makes it an ideal choice for these applications. Additionally, the module can be used in a variety of automotive components such as battery pack inverters and DC/DC converters.

Working Principle

The APTGLQ25H120T2G module is based on the IGBT (Insulated-Gate Bipolar Transistor) switching mechanism. An IGBT is a type of bipolar transistor that consists of two dissimilar materials - a P-type semiconductor and an N-type semiconductor - separated by an insulating material. The two semiconductor materials form a series of junctions that form a ‘junction field effect transistor’ (JFET), which is responsible for the switching of the IGBT.When an electric current flows into the P-type material, the gate voltage of the connected IGBT decreases, which in turn decreases the current flowing through the N-type material. This process is called the ‘turn-off’ process and is responsible for switching off the IGBT. The reverse process is known as the ‘turn-on’ process, which is activated when the gate voltage increases, thus allowing a current to flow through the N-type material and turning on the IGBT.One of the main advantages of IGBTs is that they are faster, more efficient, and more reliable than traditional power semiconductors, such as bipolar transistors and MOSFETs. Furthermore, IGBTs have a higher switching frequency, lower power losses, and they are more compact and easier to mount on PCBs.

Conclusion

The APTGLQ25H120T2G is an incredibly powerful IGBT Module that is suitable for a wide range of industrial, automotive, and transportation applications. Its superior power-switching performance and efficiency make it ideal for high-power applications such as renewable energy systems, motor control, and power conversion. The IGBT module is based on the insulated-gate bipolar transistor switching mechanism, which is more efficient and reliable than traditional power semiconductors.

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