APTGT600DU60G Allicdata Electronics
Allicdata Part #:

APTGT600DU60G-ND

Manufacturer Part#:

APTGT600DU60G

Price: $ 106.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRENCH DUAL SOURCE SP6
More Detail: IGBT Module Trench Field Stop Dual, Common Source ...
DataSheet: APTGT600DU60G datasheetAPTGT600DU60G Datasheet/PDF
Quantity: 1000
100 +: $ 97.04590
Stock 1000Can Ship Immediately
$ 106.75
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Dual, Common Source
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 700A
Power - Max: 2300W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 600A
Current - Collector Cutoff (Max): 750µA
Input Capacitance (Cies) @ Vce: 49nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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IGBTs (Insulated Gate Bipolar Transistors) are a type of transistor that combines the best of both MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) and BJT (Bipolar Junction Transistors): high switching speed and high current carrying capacity.

The APTGT600DU60G is an IGBT Module from APT Microelectronics, designed to deliver 600 Amps of continuous current with 600 Volts of peak voltage blocking. The lifetime of the module is designed to be 10,000 hours under 400 Amps. It has a soft turn-on and low EMI noise operation. Additionally, the module has a built–in temperature sensor that can detect and monitor complex conditions.

The APTGT600DU60G is used in a wide range of applications, such as welding, DC-DC converters, uninterruptible power supplies, AC and DC motor drives, photovoltaic inverters, lighting, smart meters and traction systems.

The working principle of the APTGT600DU60G is based on the principle of an IGBT gate controlled bipolar transistor. The IGBT consists of two parts; a PNP transistor and an N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The same voltage potential is applied to both the emitter and collector. This allows the collector current to flow through the PNP transistor part and the MOSFET part.

When the gate voltage of the IGBT is placed in a negative state, the MOSFET will not be able to conduct current, and the IGBT will be in an “off” state. On the other hand, when the gate voltage is given a positive voltage, the MOSFET will be in an “on” state and this allows the collector current to flow. This also switches on the IGBT, so current can flow from the emitter to collector.

The APTGT600DU60G has a variety of protective features that provide additional protection for the user. Such features include thermally activated current limiting, overvoltage protection, negative overvoltages, and short circuit protection. Additionally, the module has anti-parallel free-wheeling diodes and non-polarity gate drive, that makes it easy to control the IGBT module.

In summary, the APTGT600DU60G is an IGBT Module designed to provide power input or output and is used in a variety of applications. The working principle of the module is based on the principle of an IGBT gate controlled bipolar transistor. It also has a number of protective features and built-in temperature sensors for monitoring complex conditions.

The specific data is subject to PDF, and the above content is for reference

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