Allicdata Part #: | APTGLQ40DDA120CT3G-ND |
Manufacturer Part#: |
APTGLQ40DDA120CT3G |
Price: | $ 38.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PWR MOD IGBT4 1200V 700A SP6 |
More Detail: | IGBT Module Trench Field Stop Dual Boost Chopper 1... |
DataSheet: | APTGLQ40DDA120CT3G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 35.43340 |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 2.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Dual Boost Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 250W |
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APTGLQ40DDA120CT3G is a type of insulated-gate bipolar transistor (IGBT) module, which is widely used with their outer insulated gate bipolar transistor (IGBT) and diode semiconductor components in power electronic applications such as switched-mode power supplies and adjustable speed drives.
The advantages of these IGBT modules include high power density, low on-state and switching losses, voltage ratings to 1500V, output current ratings to 120A/400A/800A, temperature ratings up to TOPS 200/230/300 and direct Kelvin metallization lead formation.
An IGBT module can be used as a switch and a bi-directional switch element. It is widely used in systems that require high power switching capability and low switching losses. The IGBT module is typically the most preferred of all the power semiconductor modules due to its numerous advantages and reasonable cost.
The basic principle of an IGBT module is that it conducts electric current when a forward gate voltage is applied. By switching the gate voltage, the IGBT module turns on/off the main current path. The operation of the IGBT module is much like the operation of a MOSFET, except that an IGBT module has a positive gate bias voltage instead of a negative voltage. This allows the IGBT module to switch from an "on" to an "off" state with a low gate voltage.
The APTGLQ40DDA120CT3G is a popular choice of IGBT module in power electronics applications. It has a rated current of 120 A, a voltage of 1200 V, and a package size of 625 W x 500 L x 135 H (mm). It can handle a power dissipation of up to 280 W at 25 °C, and has a thermal resistance of 12.5 °C/W. It also has an in-built protection function and an avalanche energy capability of up to 30 mJ.
The APTGLQ40DDA120CT3G is typically used in applications such as motor control, AC/DC and DC/DC conversion, solar inverters, industrial welding, and various other power electronics related systems. It is also commonly used in systems requiring high-current switching and minimal turn-off losses. The IGBT module can be easily integrated into existing designs due to its size and ease of installation.
In summary, the APTGLQ40DDA120CT3G is a type of IGBT module that offers many advantages over other power semiconductor modules. It is typically used in applications such as motor control, AC/DC and DC/DC conversion, solar inverters, industrial welding, and various other related systems. It has the ability to switch high currents at relatively low gate voltages, and its thermal properties and in-built protection functions make it a reliable and cost-effective choice for power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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