APTGT150A120T3AG Allicdata Electronics
Allicdata Part #:

APTGT150A120T3AG-ND

Manufacturer Part#:

APTGT150A120T3AG

Price: $ 49.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT ARRAY 1200V 220A 833W SP3
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 22...
DataSheet: APTGT150A120T3AG datasheetAPTGT150A120T3AG Datasheet/PDF
Quantity: 1000
100 +: $ 44.65080
Stock 1000Can Ship Immediately
$ 49.11
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 220A
Power - Max: 833W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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APTGT150A120T3AG is commonly referred to as an insulated gate bipolar transistor (IGBT) module. It is a combination of a power transistor and an insulated gate FET in a single device to create a block that provides the combined properties of fast, high power switching and low on resistance that IGBT modules are well known for. The module is capable of power switching up to-180vdc or +150vdc, making it an attractive choice for a wide range of applications and providing great reliability and efficiency.

Application

The APTGT150A120T3AG module is a reliable and efficient power switching component that is perfect for a wide range of applications. It is designed for use in high power switching circuits, such as in AC and DC motor drives, power supplies, LED lighting applications, medical machines, welding machines, servo motors, and railway traction applications. It is also suitable for harsh environments, such as high vibration and temperature.

Working Principle

The APTGT150A120T3AG module works on the principle of an insulated gate bipolar transistor (IGBT). The IGBT consists of an insulated gate field-effect transistor (IGFET) and a bipolar transistor, which are connected in series and switching is conducted by controlled current flow. With the goal of reducing the amount of power dissipated during switching, an insulated gate field-effect transistor is used to control the voltage across the bipolar transistor to achieve fast and efficient power switching. The IGBT module is capable of switching very large current with a relatively low on-state voltage drop. This makes it easy to control even large current circuits.

An insulated gate field-effect transistor Is a voltage-controlled device, which means that it can be turned “on” and “off” with a given voltage. When the gate voltage is applied, current will flow from the collector to the emitter, allowing for power switching to take place. The IGBT module allows for fast switching, low loss and low EMI, making it a great choice for high power applications.

The APTGT150A120T3AG module also utilizes a special structure called the “grill-gate structure” which increases the breakdown voltage of the module by 500v, improves its thermal stability and reduces the turn-off switching loss. This structure also allows for lower noise, as it reduces the number of parasitic capacitance.

Advantages

The APTGT150A120T3AG module is an incredibly reliable and efficient power switching component that offers a variety of advantages. It has good temperature performance, fast switching, high power capacity and a low on-resistance, making it an ideal choice for a wide range of applications. Additionally, it is capable of power switching up to -180vdc or +150vdc, making it perfect for a variety of power switching requirements. The module requires minimal power dissipation, resulting in lower temperatures and improved efficiency. It is also extremely reliable, making it a great choice for harsh environments.

Conclusion

The APTGT150A120T3AG module is a versatile, reliable and efficient power switching component. It has a wide range of applications and is capable of power switching up to -180vdc or +150vdc, making it a great choice for a variety of applications. The module utilizes a grill-gate structure which increases the breakdown voltage and reduces the turn-off switching loss. Its low on-resistance and fast switching make it a great choice for any sort of power switching requirement. Additionally, its low power dissipation makes it an ideal choice for harsh environments and applications where power efficiency is crucial.

The specific data is subject to PDF, and the above content is for reference

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