
Allicdata Part #: | APTGF180DA60TG-ND |
Manufacturer Part#: |
APTGF180DA60TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 220A 833W SP4 |
More Detail: | IGBT Module NPT Single 600V 220A 833W Chassis Moun... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 220A |
Power - Max: | 833W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 180A |
Current - Collector Cutoff (Max): | 300µA |
Input Capacitance (Cies) @ Vce: | 8.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTGF180DA60TG module is a part of the IGBT family of transistors. It is an insulated-gate bipolar transistor (IGBT) that is used in many applications where fast switching and reliable operation are needed. The APTGF180DA60TG has a voltage rating of 1600 Volts, a current rating of 22 Amps, and is manufactured in a surface-mount package. It is suitable for use in a wide variety of applications such as motor control, welding, and power factor correction.
The IGBT is a form of power transistor that combines the voltage characteristics of a metal-oxide-semiconductor (MOS) transistor with the current handling capabilities of a bipolar transistor. The IGBT is essentially a combination of an n-channel MOSFET and a p-channel MOSFET that have been merged at their conduction and cut-off regions. This hybrid structure allows the IGBT to switch faster than either a bipolar transistor or a MOSFET alone.
The APTGF180DA60TG module is a high-power IGBT that has high capacitance characteristics. The capacitance value, which is associated with the conductivity of the IGBT, is directly related to the frequency of operation and the rate of current conduction. This makes the APTGF180DA60TG ideal for applications that require fast switching speeds,accurate current regulation and low losses.
The working principle of the APTGF180DA60TG involves two main processes - conduction and cut-off. When a positive voltage is applied to the gate of the IGBT, a conducting path is created between the collector and emitter. This allows current to flow through the IGBT. The current flow is controlled by the amount of voltage applied to the gate. When the gate voltage is decreased, the current path is cut off and the IGBT is said to be in the off-state. This allows the IGBT to be used in applications that require accurate control of current flow.
The APTGF180DA60TG module is suitable for a wide variety of applications including motor control, welding, and power factor correction. It is a highly reliable, fast switching IGBT that can be used to control powerful currents with great precision. Its high capacitance characteristics ensure that it can operate at high frequencies with minimal losses. The APTGF180DA60TG is a great choice for any application where fast switching and reliable operation are needed.
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