| Allicdata Part #: | APTGT30H170T3G-ND |
| Manufacturer Part#: |
APTGT30H170T3G |
| Price: | $ 39.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT MOD TRENCH FULL BRIDGE SP3 |
| More Detail: | IGBT Module Trench Field Stop Full Bridge Inverter... |
| DataSheet: |  APTGT30H170T3G Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 35.47940 |
Specifications
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Full Bridge Inverter |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| Current - Collector (Ic) (Max): | 45A |
| Power - Max: | 210W |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 30A |
| Current - Collector Cutoff (Max): | 250µA |
| Input Capacitance (Cies) @ Vce: | 2.5nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP3 |
| Supplier Device Package: | SP3 |
Description
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.APTGT30H170T3G is a 3-phase Insulated Gate Bipolar Transistor (IGBT) Module, part of the T series from Mitsubishi Electric. This module is designed for high power applications and has a wide voltage range up to 1700V. The module has an attrition rate of 30A and has a high switching frequency of around 3000 kHz for fast switching operations.
Application Field
APTGT30H170T3G is mainly used in industrial drives and motor control. The module has been designed to be fit in a wide range of applications, such as print presses, injection moulders, conveyors, and pumps. It is also suitable in the use of AC servo-drives, UPSs and inverter drives, thanks to its high current capabilities and voltage range. In addition to this, the APTGT30H170T3G can be used in application using SMPS and switching applications which calls for a high speed of switching and high current rating.Working Principle
The APTGT30H170T3G uses an Insulated Gate Bipolar Transistor (IGBT) to control its current flow and switching operations. The IGBT is a voltage-driven device, meaning the current flow is controlled by the voltage applied to the gate of the transistor resulting in electrons passing through the transistor\'s channel. This process creates a junction between the thin semiconductor layers in the transistor, forming a low voltage barrier, allowing current to flow from the Collector to the Emitter. The voltage-controlled feature of the IGBT provides fast switching operations, allowing for fast control of large currents. This makes it ideal for use in electric drive and high power applications. The module is also equipped with an Anti-Parallel Diode, which is used to provide protection against current overload and transient operations. The Diode prevents the module\'s junction temperature from rising too much, protecting against damage.Conclusion
The APTGT30H170T3G module is a high power insulated gate bipolar transistor module designed for industrial drives and motor control applications. The module has a wide voltage range, high switching frequency and high current capabilities making it ideal for use in application that requires fast switching and high power. The IGBT technology integrated into the module provides the fast switching operations necessary for its applications, while the anti-parallel diode provides protection against overload and transient operations. Due to its design and features, the APTGT30H170T3G is a popular choice for industries across the world.The specific data is subject to PDF, and the above content is for reference
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