| Allicdata Part #: | APTGF15H120T1G-ND |
| Manufacturer Part#: |
APTGF15H120T1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | IGBT MODULE NPT FULL BRIDGE SP1 |
| More Detail: | IGBT Module NPT Full Bridge Inverter 1200V 25A 140... |
| DataSheet: | APTGF15H120T1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | NPT |
| Configuration: | Full Bridge Inverter |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 25A |
| Power - Max: | 140W |
| Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 15A |
| Current - Collector Cutoff (Max): | 250µA |
| Input Capacitance (Cies) @ Vce: | 1nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -- |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP1 |
| Supplier Device Package: | SP1 |
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APTGF15H120T1G is a low-voltage IGBT module developed by American Power Technology (APT). It is mainly used in applications such as motor drives, lighting control, rectifier circuits, solar power inverters and uninterruptible power supplies (UPS).
The APTGF15H120T1G is a Field-Stop Trench IGBT module with an Insulated Gate Bipolar Transistor (IGBT) and a diode. It is designed in a direct 1200V/15A/155AITC2 package with an insulation voltage of 1700V/DCIHO. Its typical collector-to-emitter voltage is 900V and maximum collector current is 20A.
The IGBTs used in the module have fast switching time, high-speed current flow and low gate charging current. This makes it suitable for various cooling methods and applications. Additionally, the IGBTs are very reliable and are capable of handling high currents and power levels, making them suitable for applications that require high speed and high-power efficiency.
The APTGF15H120T1G is an efficient and reliable module. It has excellent switching characteristics due to its low gate-charging current, which ensures that the IGTB operates at an optimum level. It also has a low on-state voltage switching loss and low junction to case thermal resistance.
The APTGF15H120T1G is designed around a static insulated gate bipolar transistor structure. An insulated gate controls the current flow of the bipolar junction transistor by maintaining charge balance between electrons and holes. This structure allows for the transistor to turn on quickly at low voltages and extremely low current.
The module works on the principle of voltage and current control. It has an input voltage of from 4.5V-700V and a maximum output current of 20A. The gate-emitter voltage is comparable to the chip voltage. As the gate voltage rises, the current through the module decreases and switches ‘off’ the module. Additionally, when the gate-emitter threshold voltage is exceeded, the module switches on and the output voltage can be monitored. The gate current is regulated by the gate voltage, and any changes in the gate voltage will result in a proportional change in current.
The APTGF15H120T1G module is a versatile and reliable device. It is suitable for a wide range of industrial, automotive and other applications that require low-voltage and high-current operations. It has been used in motor drives, lighting control, rectifier circuits, solar power inverters, and uninterruptible power supplies.
The specific data is subject to PDF, and the above content is for reference
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APTGF15H120T1G Datasheet/PDF