| Allicdata Part #: | APTGF50DA120CT1G-ND |
| Manufacturer Part#: |
APTGF50DA120CT1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOD IGBT NPT SIC CHOPPER SP1 |
| More Detail: | IGBT Module NPT Single 1200V 75A 312W Chassis Moun... |
| DataSheet: | APTGF50DA120CT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | NPT |
| Configuration: | Single |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 75A |
| Power - Max: | 312W |
| Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 50A |
| Current - Collector Cutoff (Max): | 250µA |
| Input Capacitance (Cies) @ Vce: | 3.45nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -- |
| Mounting Type: | Chassis Mount |
| Package / Case: | SP1 |
| Supplier Device Package: | SP1 |
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APTGF50DA120CT1G: Application Field and Working Principle
APTGF50DA120CT1G is a type of insulated-gate bipolar transistor (IGBT) module. An IGBT is a power semiconductor device composed of two separate components, an insulated-gate field-effect transistor (MOSFET) and a bipolar transistor, which are interconnected by an additional layer of insulation and can respond quickly to changes in voltage. This makes them ideal for use in power control and conversion systems, such as those found on large power control boards and in automotive applications.
The APTGF50DA120CT1G is an IGBT module with a reverse-recovery threshold of up to 6V and a current rating of up to 50A. It is used in a wide range of applications across numerous industries, such as automotive, renewable energy, welding, and motor control. The module can also be used in PFC converters and AC motor drives.
The APTGF50DA120CT1G module is designed with a vertical construction and employs an optimized die layout for reduced thermal resistance and increased power-switching efficiency. The module uses an aluminum oxide ceramic substrate for insulated-gate semiconductor protection and is capable of fast response times even at high temperatures.
The working principle of the APTGF50DA120CT1G module is similar to other power semiconductor devices. The module contains two separate components, an insulated-gate field-effect transistor (MOSFET) and a bipolar transistor, which are connected by an additional layer of insulation. When voltage is applied to the gate of the module, current will flow through the MOSFET, creating a channel between the drain and the source. This channel can be used to control the current, allowing the transistor to be used as a switch to control power. Furthermore, the module can be used in a complementary configuration, allowing both an N- Channel and P-Channel FET to be controlled with a single supply.
The APTGF50DA120CT1G module is an excellent choice for any application where fast switching and high current ratings are required. The module is designed for use in high-power applications, with its electric strength test up to 2500V. It also features superior temperature and voltage characteristics, making it suitable for use in many different applications.
The APTGF50DA120CT1G module is an ideal choice for any application requiring power control and conversion. Its wide range of applications, superior electrical characteristics, and excellent temperature performance make it a great choice for any power application. With its optimized die layout and fast response times, the APTGF50DA120CT1G module is an ideal choice for any application needing power control and conversion.
The specific data is subject to PDF, and the above content is for reference
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APTGF50DA120CT1G Datasheet/PDF