APTGF50TL60T3G Allicdata Electronics
Allicdata Part #:

APTGF50TL60T3G-ND

Manufacturer Part#:

APTGF50TL60T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT ARRAY 600V 65A 250W SP3
More Detail: IGBT Module NPT Three Level Inverter 600V 65A 250W...
DataSheet: APTGF50TL60T3G datasheetAPTGF50TL60T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Three Level Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 2.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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APTGF50TL60T3G module is an important part of transistors, specifically a type of insulated gate bipolar transistor (IGBT). This module is a high-power, low operating temperature module that can be used in a variety of applications. It is typically used in fields such as power electronics, automotive, renewable energy, robotics, and machine control.

An APTGF50TL60T3G module is composed of three units – the integrated gate-commutated thyristor (IGCT), the IGBT, and the heaters for power dissipation. The main purpose of an IGCT is to help regulate and control the voltage, current and power of the system. It also acts as a switch that allows the voltage to pass through the system without creating any losses. The IGBT is responsible for providing the low on-state voltage drop and fast switching times that are needed for these types of applications. The heaters help dissipate any excess power created in the system, which helps reduce system noise and energy losses.

The working principle of the APTGF50TL60T3G module is based on its integrated components. The IGCT is a low power switching device which is activated by a current pulse. This current pulse is created by increasing or decreasing the voltage on the IGBT’s gate. This action will create a voltage between the gate and the emitter called the voltage “breakdown”. This breakdown activates the surrounding circuits and causes the voltage across the two terminals of the module to increase or decrease, depending on the direction of the current pulse. This action allows the module to regulate the power and current flow through the system.

The APTGF50TL60T3G module can be used in a variety of applications. It can be used to provide low-power, high-current switching in power electronics applications. This module is ideal for these types of applications because it can provide a high switching frequency and fast response times. It can also be used in automotive applications, as it can provide fast switching and low operating temperatures, making it ideal for electric vehicles. Additionally, this module can be used in renewable energy applications, robotics, and machine control.

In conclusion, the APTGF50TL60T3G module is a high-performance, low operating temperature module that can be used in a variety of applications. It is composed of three separate components – the IGCT, the IGBT, and the heaters. The main working principle of this module is based on the integrated gate-commutated thyristor and the IGBT, which work together to regulate and control the power, current and voltage of the system. This module can be used in a variety of applications, such as power electronics, automotive, renewable energy, robotics, and machine control.

The specific data is subject to PDF, and the above content is for reference

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