APTGF90H60T3G Allicdata Electronics
Allicdata Part #:

APTGF90H60T3G-ND

Manufacturer Part#:

APTGF90H60T3G

Price: $ 48.66
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: POWER MOD IGBT FULL BRIDGE SP3
More Detail: IGBT Module NPT Full Bridge Inverter 600V 120A 416...
DataSheet: APTGF90H60T3G datasheetAPTGF90H60T3G Datasheet/PDF
Quantity: 37
1 +: $ 44.23230
10 +: $ 41.55420
25 +: $ 39.67770
Stock 37Can Ship Immediately
$ 48.66
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Power - Max: 416W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 4.4nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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IGBT Modules: APTGF90H60T3G Application Field and Working Principle

IGBT modules are one of the most popular semiconductor products used in modern industrial control systems. APTGF90H60T3G is a three-phase field-effect transistor module manufactured by Anpec Electronics, Inc. It has a wide range of application fields and works on a principle that is similar to that of a power MOSFET. This article will provide an overview of the application field and principles of operation of an APTGF90H60T3G IGBT module.

Applications

APTGF90H60T3G IGBT modules have several potential applications. They can be used for controlling the speed and torque of three-phase motors, motion control, AC and DC motor drives, power switching circuits and many more.

Working Principle

This module works on the principles of power MOSFETs but with some modifications. It uses insulated-gate bipolar transistors (IGBTs) as the switching elements which are made up of a MOSFET and a bipolar transistor in the same package. This combination allows the module to switch the current more quickly, generate higher power efficiency, and operate at higher temperatures than a power MOSFET alone.When the gate voltage is high, the MOSFET attracts electrons to the gate and switches the IGBT into an ON state. This allows the electric current to flow freely between drain and source. When the gate voltage is low, the MOSFET allows electrons to leave the gate junction, causing the IGBT to switch into an OFF state. This stops the current from flowing.

Benefits

The use of IGBT modules allows for higher power density, robustness and improved efficiency. They are highly resistant to damage from electrostatic discharge and reverse polarity, making them an ideal choice for industrial applications. The use of an IGBT module also allows for quick and smooth transitions between high and low voltage states, and provides greater control over the switching process.

Conclusion

The APTGF90H60T3G IGBT module is a great choice for controlling the speed, torque and efficiency of three-phase motors and other power switching circuits. Its combination of insulated-gate bipolar transistors, MOSFETs, and reliable protection mechanicals ensures that the module can handle a wide range of voltages and currents while running efficiently and safely. Therefore, it is a popular choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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