
Allicdata Part #: | APTGLQ100A65T1G-ND |
Manufacturer Part#: |
APTGLQ100A65T1G |
Price: | $ 28.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PWR MOD IGBT4 650V 200A SP1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 650V 200... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 25.87110 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 350W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 100A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
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Transistors - IGBTs - Modules
The APTGLQ100A65T1G is a field-effect transistor that can be used in a variety of applications. This type of transistor is sometimes referred to as an Insulated Gate Bipolar Transistor (IGBT) through its core design feature that is its insulated gate. This transistor is built in the form of a module and has characteristics such as low conduction and switching losses, fast switching times, and low gate drive requirements. With such characteristics, the APTGLQ100A65T1G is popular in many types of modern electrical and electronic circuit designs.
Application Field and Working Principle
The APTGLQ100A65T1G is used in various application fields that require high power and efficient operation of circuits. It is capable of handling power up to 100A and 650V. It is used in many applications such as home appliances, industrial drives, power supplies, lighting systems, and motor control. Its fast switching speeds also make this transistor ideal for frequency converters and AC motor drives.
This field-effect transistor works by using voltage signals to open and close the insulation gate of the transistor. It has two insulated metal oxide semiconductor (IMOS) layers, which connect the MOS (metal oxide semiconductor) transistor to the source drain of the IGBT transistor. The IMOS layers are charged or discharged by the gate-source voltage to control the current flow in the transistor.
The IGBT also has a second layer of insulation involving a higher voltage. This layer will remain closed when the gate-source voltage is high and will open when the gate-source voltage is low. This helps reduce the current passing through the device, ensuring it is safe to use. When the gate-source voltage is high, the MOS transistor is closed and the current is shut off. When the gate-source voltage is low, the IMOS layer is charged and the current is allowed to flow.
Advantages and Disadvantages
The APTGLQ100A65T1G has many advantages compared to other types of transistors. It has a low conduction loss and switching losses, which makes it an ideal choice for power applications. It also has low gate drive requirements which make it much easier to control. The fast switching times of the device also make it ideal for switching power supplies, lighting systems and motor control. The IGBT also has a higher peak current than other types of transistors, making it ideal for applications that need to handle a lot of power.
However, there are also some drawbacks to using this transistor. It can be costly, and it is often difficult to find a suitable substitute if the APTGLQ100A65T1G is not available. Additionally, the process of manufacturing this transistor can be very complex and time-consuming, adding to the cost.
Conclusion
In summary, the APTGLQ100A65T1G is an insulated gate bipolar transistor with many advantages and suitable for many types of applications. Its low conduction and switching losses, low gate drive requirements, and fast switching times make it ideal for applications requiring high power and efficient operation. Although the APTGLQ100A65T1G is costly and can be difficult to acquire, it is still one of the most popular transistors available.
The specific data is subject to PDF, and the above content is for reference
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