APTGT100A120D1G Allicdata Electronics
Allicdata Part #:

APTGT100A120D1G-ND

Manufacturer Part#:

APTGT100A120D1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE TRENCH PHASE LEG D1
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 15...
DataSheet: APTGT100A120D1G datasheetAPTGT100A120D1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 520W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 3mA
Input Capacitance (Cies) @ Vce: 7nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Description

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APTGT100A120D1G is an Insulated Gate Bipolar Transistor (IGBT) module. An IGBT is a power semiconductor device that combines the features of both a MOSFET (transistor) and a bipolar junction transistor. This IGBT module is designed for use in medium and high-power applications in a variety of industries, including automotive, industrial, and medical/aero.The APTGT100A120D1G IGBT module is designed to provide good electrical performance, reliability and long life. It has a maximum RMS current of 100 Amp and a peak voltage of 1200V. This module is commonly used for high-current, high-voltage applications, such as electric motor drives, battery chargers, traction drives, power converters, and induction heating systems.It is important to note that the APTGT100A120D1G module has a low on-state voltage drop. This is a major benefit for high-power applications, as it allows for better control over the output voltage and current. Additionally, this module has a fast operating speed and can handle high speed switching applications with ease.The APTGT100A120D1G IGBT module features a built-in snubber circuit, which provides protection against overcurrent and short-circuit conditions. The snubber circuit helps to reduce losses in power switching applications. This module also features self-protecting overload and short circuit protection.The working principle of the APTGT100A120D1G IGBT module is based on the basic principle of the MOSFET, which is voltage-controlled current flow. When a voltage is applied to the gate of the IGBT, the gate generates a field which reverses the direction of current flow in the drain-source circuit. This creates a high current flow in the drain-source circuit, which can be used to control the output voltage and current of the system.In high-power applications, the APTGT100A120D1G\'s low voltage drop and fast operating speed provide several advantages. This IGBT module can help reduce losses in power switching applications due to its low on-state voltage drop. Additionally, its fast operating speed helps reduce switching losses and allow for better control of the output voltage and current.The APTGT100A120D1G IGBT module has been designed to provide excellent performance, reliability and long life. It is commonly used in a variety of high-power applications, including electric motor drives, battery chargers, traction drives, power converters, and induction heating systems. Its low on-state voltage drop and fast operating speed provide several advantages in high-power applications, allowing for better control over output voltage and current while reducing losses in power switching applications. With its built-in snubber circuit as well as self-protecting overload and short circuit protection, the APTGT100A120D1G IGBT module is a reliable, cost-effective solution for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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