APTGT30H60T3G Allicdata Electronics
Allicdata Part #:

APTGT30H60T3G-ND

Manufacturer Part#:

APTGT30H60T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRENCH FULL BRIDGE SP3
More Detail: IGBT Module Trench Field Stop Full Bridge Inverter...
DataSheet: APTGT30H60T3G datasheetAPTGT30H60T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Power - Max: 90W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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An Insulated Gate Bipolar Transistor (IGBT) module is an electronic device that combines both a power MOSFET and an insulated gate bipolar transistor (IGBT) in a single package. The type of module generally referred to as an APTGT30H60T3G is designed to provide maximum control of power levels and reduce electromagnetic interference. An IGBT module is a compact, cost effective solution for controlling power in applications with higher power requirements. The integrated module combines both an IGBT and a power MOSFET in the same package, allowing a maximum of 600V with a typical current rating of 30A. An IGBT module provides advantages over other types of switching devices, such as a lower operating temperature and a reduction in heat dissipation. In addition, the module also offers a number of other advantages, such as lower losses and higher switching frequency. The working principle of an APTGT30H60T3G module involves the integration of two separate power devices. The power MOSFET is used to generate an additional voltage to drive the IGBT, and the IGBT is then used to control the flow of current. As the voltage across the MOSFET is increased, the current will drop, which increases the voltage across the IGBT supplies the current to the load.

APTGT30H60T3G modules are being applied in a wide range of applications, such as motor drives, solar inverters, power supplies, UPS systems and motor control. Thanks to its high current rating and low losses, the modules are also being utilized in PFC/PFC applications, automotive, and medical applications. In order to ensure that the module performs to its highest level, it should be correctly matched with an appropriate heat-sink, in order to properly dissipate the heat generated during operation.

In conclusion, the APTGT30H60T3G module is an efficient and cost-effective solution for controlling power in applications with higher power requirements. It offers a number of advantages over other types of switching devices and is being used in a variety of applications. In order for it to perform effectively, it should be correctly matched with an appropriate heat-sink and maintained in accordance with manufacturer instructions.

The specific data is subject to PDF, and the above content is for reference

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