APTGTQ200A65T3G

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IGBTs or Insulated Gate Bipolar Transistors are power electronic devices widely used in industrial and consumer applications. The APTGTQ200A65T3G module is a high-power, high-temperature IGBT used for high-frequency applications ranging from power generation to LED lighting.

The APTGTQ200A65T3G module is a package of an IGBT, a diode, and a resistor within a single housing. It has a maximum allowable power dissipation of 1800 W and a maximum junction temperature of 150°C. The package has a mounting area of 125 mm x 63 mm. It has a simple pin and screw attachment that allows it to be easily mounted onto a circuit board or panel.

The APTGTQ200A65T3G module is used in a variety of applications that require high-voltage, high-power switching on short pulses. Some of these applications include power generation, uninterruptible power supplies, motor drives, and LED lighting.

The APTGTQ200A65T3G module works by stacking an IGBT and a diode in series to form a gate turn-off (GTO) switch, and connecting a resistor in parallel to limit the current. When voltage is applied to the gate terminal, a field effect is created which reduces the resistance. This reduces the voltage across the IGBT, allowing for current flow between the collector and emitter. When the voltage is removed from the gate terminal, the field effect is removed, the IGBT’s resistance increases, and the current is cut off.

The APTGTQ200A65T3G module is designed for high-frequency switching applications, making it suitable for power generation, UPS, motor drives, and LED lighting. Its high power dissipation and junction temperature ratings make it a reliable and robust device for these applications. The simple pin and screw attachment makes it easy to mount onto a circuit board or panel. The module offers reliable switching and makes an ideal choice for high-voltage, high-power switching applications.

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