ATP404-H-TL-H Allicdata Electronics
Allicdata Part #:

ATP404-H-TL-H-ND

Manufacturer Part#:

ATP404-H-TL-H

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 95A ATPAK
More Detail: MOSFET N-CH 60V 95A ATPAK
DataSheet: ATP404-H-TL-H datasheetATP404-H-TL-H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.57452
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: --
Technology: --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ATPAK
Package / Case: ATPAK (2 leads+tab)
Description

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The ATP404-H-TL-H is a high-power, high-side vertical Over-voltage protection (OVP) MOSFET with dual gate. It offers the advantage of a variety of features that make the ATP404-H-TL-H the ideal choice for protecting a variety of high-side, vertical systems from over-voltage conditions. It is specially designed for applications such as intelligent Drivers, CPU and other high-power equipment.

Features:

The ATP404-H-TL-H features an independent, dual-gate design that allows it to provide high-side OVP with reduced voltage drops and increased current ratings over single-gate protection MOSFETs. The gate of the ATP404-H-TL-H is designed to be insensitive to signal noise while maintaining high signal fidelity. This helps to ensure that even in high noise environments, the circuit will work properly. Additionally, the dual-gate design helps protect against output overshoot caused by inrush current.

The ATP404-H-TL-H is designed to be highly efficient, providing up to 90% efficiency in off-state mode and up to 97% efficiency in on-state mode. This helps to maximize power savings and reduce power consumption, making the ATP404-H-TL-H the ideal choice for high-power applications.

Applications:

The ATP404-H-TL-H is ideal for applications such as intelligent Drivers, CPU and other high-power equipment. It can be used as an over-voltage protection device in high-voltage systems as well as in battery and power supply applications. In addition, the ATP404-H-TL-H can be used in OVP protection circuits and in protection circuits featuring over-current, over-temperature and circuit-monitored sequencing.

Working Principle:

The ATP404-H-TL-H is designed to operate as an over-voltage protection device in high-voltage applications. Its dual-gate design allows the device to dissipate excess voltage while simultaneously preventing output overshoot caused by inrush current. When an over-voltage condition is detected, the ATP404-H-TL-H’s gate will turn on, dissipating excess voltage and limiting the output voltage. At the same time, the ATP404-H-TL-H will also perform voltage monitoring to ensure the system remains within its specified voltage limits.

The ATP404-H-TL-H is designed to remain in the “on” state until the over-voltage condition is fully dissipated. Once the voltage has returned to its predetermined level, the gate will turn off, returning the system to its normal state. This helps to ensure that the system is not left damaged or vulnerable to further over-voltage events.

Conclusion

The ATP404-H-TL-H is a high-power, high-side vertical Over-voltage protection (OVP) MOSFET with dual gate. It is designed to provide a variety of features for protecting applications such as intelligent Drivers, CPU and other high-power equipment from over-voltage events. The dual-gate design helps to dissipate excess voltage while also protecting against output overshoot caused by inrush current. Additionally, the ATP404-H-TL-H is designed to be highly efficient, providing up to 90% efficiency in off-state mode and up to 97% efficiency in on-state mode.

The specific data is subject to PDF, and the above content is for reference

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